Skip to main content

2 Result(s)

within C. R. Tonheim Remove this filter

and

  1. No Access

    Article

    HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

    This paper presents results from recent work on molecular beam epitaxy growth of HgCdTe at the Norwegian Defence Research Establishment (FFI), including studies of material properties and fabrication of photod...

    R. Haakenaasen, E. Selvig, C. R. Tonheim… in Journal of Electronic Materials (2010)

  2. No Access

    Article

    Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

    The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth te...

    E. Selvig, C.R. Tonheim, T. Lorentzen, K.O. Kongshaug… in Journal of Electronic Materials (2008)