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  1. No Access

    Article

    Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

    The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth te...

    E. Selvig, C.R. Tonheim, T. Lorentzen, K.O. Kongshaug… in Journal of Electronic Materials (2008)

  2. No Access

    Article

    Nanowires in the CdHgTe Material System

    HgTe nanowires have been grown by molecular beam epitaxy (MBE). They are nucleated at Au particles on Si or GaAs substrates and subsequently self-organize and grow laterally on the surface into 20–50 nm wide, ...

    R. Haakenaasen, E. Selvig, S. Hadzialic, T. Skauli… in Journal of Electronic Materials (2008)

  3. No Access

    Article

    Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates

    Uniform layers of cadmium mercury telluride have been grown on inhomogeneous cadmium zinc telluride substrates by molecular beam epitaxy so that a single epitaxial layer experiences a laterally varying lattice...

    T. Skauli, T. Colin, R. Sjølie, S. Løvold in Journal of Electronic Materials (2000)

  4. No Access

    Article

    Use of near-infrared as a screening technique for CdZnTe substrates

    Epitaxial layers of Cd x Hg1−xTe (CMT) are grown onto Cd1−yZn y Te (CZT) substrates in order to minimize misfit dislocations at the growth inter...

    J. E. Gower, C. D. Maxey, P. Capper… in Journal of Materials Science: Materials in… (1999)

  5. No Access

    Article

    Effect of device processing on 1/f noise in uncooled, auger-suppressed CdHgTe diodes

    Auger suppression reduces the leakage current in uncooled CdHgTe diodes to the point where the shot noise limited D* is significantly higher than for other uncooled detectors. However, Auger-suppressed diodes ...

    C. L. Jones, N. E. Metcalfe, A. Best, R. Catchpole… in Journal of Electronic Materials (1998)

  6. No Access

    Article

    Applications of thermodynamical modeling in molecular beam epitaxy of CdxHg1-xTe

    It is well known that the crystalline quality of CdxHg1-xTe grown by molecular beam epitaxy is critically dependent on the substrate temperature. The optimal growth temperature has been identified immediately bel...

    T. Colin, T. Skauli in Journal of Electronic Materials (1997)

  7. No Access

    Article

    Interband magneto-absorption in narrow-gap HgTe/CdTe superlattice structures

    The use of a magnetic field for interband absorption experiments in the midinfrared regime can reveal the electronic band structure of HgTe/CdTe superlattices. In high-quality samples pronounced magnetic field...

    R. Sizmann, P. Helgesen, T. Colin, T. Skauli, S. Løvold in Journal of Electronic Materials (1996)

  8. No Access

    Article

    Characterization of molecular beam epitaxially grown HgCdTe epilayers by mid-infrared interband magneto-absorption

    Interband magneto-absorption is used to characterize molecular beam epitaxially (MBE) grown HgCdTe epilayers. Both the bandgap and the Moss-Burstein shift in n-doped layers are determined from the experiments....

    P. Helgesen, R. Sizmann, T. Skauli, T. Colin, H. Steen… in Journal of Electronic Materials (1995)