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Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

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Abstract

The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth temperature. In HgTe, the shape of the microvoid defects is very sensitive to the growth temperature and can be used to determine the deviation from the optimal growth temperature. Using thermodynamical modeling, the optimal growth temperature for CdHgTe can then be calculated. We describe a mechanism for the formation of microvoids and needles which involves preferential surface diffusion of Te combined with an impurity or defect on the substrate. Microvoids on (111)B-oriented partially twinned HgTe layers were also studied. The microvoids in the twinned parts of the layer were found to be rotated 180 deg relative to the untwinned parts of the layer.

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Acknowledgement

Laila Trosdahl-Iversen is acknowledged for substrate preparation and defect etching.

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Authors and Affiliations

  1. Norwegian Defence Research Establishment, P.O. Box 25, NO-2027, Kjeller, Norway

    E. Selvig, C.R. Tonheim, T. Lorentzen, K.O. Kongshaug, T. Skauli & R. Haakenaasen

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  1. E. Selvig
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  2. C.R. Tonheim
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  3. T. Lorentzen
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  4. K.O. Kongshaug
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  5. T. Skauli
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  6. R. Haakenaasen
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Correspondence to E. Selvig.

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Selvig, E., Tonheim, C., Lorentzen, T. et al. Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy. J. Electron. Mater. 37, 1444–1452 (2008). https://doi.org/10.1007/s11664-008-0447-y

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