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Article
Theory of Electronic, Optical and Transport Properties in Silicon Quantum Wires
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Article
Composition and stability of Ω phase in an Al-Cu-Mg-Ag Alloy
Transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) were employed to determine the stability and composition of the Ω phase in an Al-Cu-Mg-Ag alloy. It is shown that the Ω. ph...
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Article
Analysis of Interface Dynamics in Solid-State Phase Transformations by In Situ Hot-Stage High-Resolution Transmission Electron Microscopy
In situ hot-stage high-resolution transmission electron microscopy (HRTEM) provides unique capabilities for quantifying the dynamics of interfaces at the atomic level. Such information is critical for understandi...
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Article
Dam** characteristics of Ti50Ni49.5Fe0.5 and Ti50Ni40Cu10 ternary shape memory alloys
The dam** characteristics of Ti50Ni49.5Fe0.5 and Ti50Ni40Cu10 ternary shape memory alloys (SMAs) have been systematically studied by resonant-bar testing and internal friction (IF) measurement. The dam** capa...
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Article
Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells
P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epi...
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Article
Electrochemical behaviors of li electrode in organic electrolytes
Characterizations of the morphology of lithium deposited in organic electrolytes were carried out using Ni substrates pretreated with H2 and CO2 gases prior to electrodeposition. The electrolytes used were 1 M Li...
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Article
Lead Iodide X-Ray and Gamma-Ray Spectrometers for Room and High Temperature Operation
In this study we report on the results of the investigation of lead iodide material properties. The effectiveness of a zone refining purification method on the material purity is determined by ICP-MS and ICP-O...
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Article
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm
We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 µm. High-quality InGaAs/InP multiple quantum wells were grown by...
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Article
Photoluminescence Excitation Study of Lo-Phonon Assisted Excitonic Transitions in GaN
We report the results of a photoluminescence excitation (PLE) study on excitonic transitions in GaN. PLE measurements were carried out as a function of temperature to investigate exciton formation, thermalizat...
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Article
Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector
A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...
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Article
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells
High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 µm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional t...
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Article
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...
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Article
Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing
We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV...
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Article
Room temperature continuous wave visible vertical cavity surface emitting laser
Visible VCSEL laser operated at room temperature continuous wave has been achieved by H+ implants using tungsten wires as an implantation mask. The laser wavelength is 650 nm, and the maximum output without he...
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Article
Thermal Conductivity of GaN Grown on Silicon Substrates
One of the principle problems of high power electronic devices is the extraction of heat from the active region of the device1. The thermal conductivity of the substrate is a crucial parameter affecting the therm...
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Article
Spin Lifetime Tuning in Zincblende Heterostructures and Tions to Spin Devices
We present analytical expressions for the D’yakonov-Perel’ spin relaxation rates under the combined action of bulk and structural inversion asymmetry for [111] zincblende heterostructures when terms up to line...
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Article
[111] Heterostructures for Spin Devices
The symmetry properties of [111] quantum wells (QWs) and superlattices, and in particular the fact that the symmetry is not reduced when bulk inversion asymmetry (BIA) is supplemented with structural inversion...
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Article
Anisotropic wet etching on birefringent calcite crystal
In this paper, a mechanism for wet etching on birefringent calcite crystal is discussed. By altering the etchant type, its concentration and the stirring speed, the etching mechanism can be confined within the...
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Article
Near-field observation of plasmon excitation and propagation on ordered elliptical hole arrays
We report a near-field study of the excitation and propagation of surface plasmon on ordered Ag elliptical hole arrays with a scattering-type scanning near-field optical microscope. Strong dipole-like local pl...
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Article
Optical Characterization of High Quality GaN Produced by High Rate Magnetron Sputter Epitaxy
The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron ...