Skip to main content

previous disabled Page of 5
and
  1. Article

    Open Access

    Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications

    Because of its ideal band gap, high density and high electron mobility-lifetime product, cadmium zinc telluride (CdZnTe or CZT) is currently the best room-temperature compound-semiconductor X- and gamma-ray de...

    U. N. Roy, G. S. Camarda, Y. Cui, R. Gul, A. Hossain, G. Yang in Scientific Reports (2019)

  2. Article

    Open Access

    Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical ima...

    U. N. Roy, R. M. Mundle, G. S. Camarda, Y. Cui, R. Gul, A. Hossain in Scientific Reports (2016)

  3. No Access

    Article

    Analysis of Defects on Chemically-Treated CdZnTe Surfaces

    In this work, we focused on investigating the various defects that extend into the near-surface region of CdZnTe (CZT) crystals, and on exploring processing techniques for producing a smooth, non-conductive su...

    A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui in Journal of Electronic Materials (2015)

  4. No Access

    Article

    Spectroscopic properties of large-volume virtual Frisch-grid CdMnTe detectors

    CdMnTe(CMT) is a promising alternative material for use as a room-temperature radiation detector. Frisch-grid detectors have a simple configuration and outstanding spectral performance compared with other sing...

    K. H. Kim, Chansun Park, Pilsu Kim, Shinhaeng Cho in Journal of the Korean Physical Society (2015)

  5. No Access

    Article

    Long-term stability of ammonium-sulfide- and ammonium-fluoride-passivated CdMnTe detectors

    We evaluated the long-term stability of CdMnTe (CMT) detectors treated with ammonium-saltbased passivants. Passivation improved the detector’s stability and reduced the degradation of its energy resolution wit...

    K. H. Kim, R. Tappero, A. E. Bolotinikov in Journal of the Korean Physical Society (2015)

  6. No Access

    Article

    Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature u...

    L. Shcherbak, O. Kopach, P. Fochuk in Journal of Phase Equilibria and Diffusion (2015)

  7. No Access

    Article

    Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors

    Surface passivation reportedly is an effective technique for controlling surface leakage current and its related electronic noise. Several chemical agents have been effectively used for passivating cadmium zin...

    A. Hossain, A. Dowdy, A. E. Bolotnikov, G. S. Camarda in Journal of Electronic Materials (2014)

  8. No Access

    Article

    Novel Approach to Surface Processing for Improving the Efficiency of CdZnTe Detectors

    We emphasize an improvement of the surface processing procedures for cadmium zinc telluride (CZT) detectors, which is one of the principal problems limiting the technology. A rough surface enhances the leakage...

    A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui in Journal of Electronic Materials (2014)

  9. No Access

    Article

    Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth

    We used a low-temperature photoluminescence (PL) technique to investigate CdTe:In crystals after annealing in molten bismuth (Bi). The two annealed samples showed different resistivities after the treatment. F...

    G. Yang, A. E. Bolotnikov, Y. Cui, G. S. Camarda in Journal of Electronic Materials (2013)

  10. No Access

    Article

    New insight into the 1.1-eV trap level in CdTe-based semiconductor

    We investigated trap levels in detector-grade CdZnTe (CZT) material grown by using three different methods, viz, the Bridgman, traveling heater method (THM), and high-pressure Bridgman method (HPB), by current...

    K. H. Kim, J. H. Choi, A. E. Bolotnikov in Journal of the Korean Physical Society (2013)

  11. No Access

    Article

    Investigation of Structural Defects in CdZnTe Detector-Grade Crystals

    We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (T...

    A. Hossain, A.E. Bolotnikov, G.S. Camarda, R. Gul in Journal of Electronic Materials (2012)

  12. Article

    Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors

    We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. ...

    G. Yang, A.E. Bolotnikov, P.M. Fochuk, Y. Cui in Journal of Electronic Materials (2012)

  13. Article

    Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 ...

    R. Gul, K. Keeter, R. Rodriguez, A.E. Bolotnikov in Journal of Electronic Materials (2012)

  14. No Access

    Article

    Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    The behavior of the internal electric field of nuclear-radiation detectors substantially affects detector performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) det...

    G. Yang, A. E. Bolotnikov, G. S. Camarda, Y. Cui in Journal of Electronic Materials (2011)

  15. No Access

    Article

    Growth of detector-grade CZT by Traveling Heater Method (THM): An advancement

    In this present work we report the growth of Cd0.9Zn0.1Te doped with In by a modified THM technique. It has been demonstrated that by controlling the microscopically flat growth interface, the size distribution a...

    U. N. Roy, S. Weiler, J. Stein, M. Groza, A. Burger in MRS Online Proceedings Library (2011)

  16. No Access

    Article

    Improvement of CdMnTe Detector Performance by MnTe Purification

    Residual impurities in manganese (Mn) are a big obstacle to obtaining high- performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the materi...

    K. H. Kim, A. E. Bolotnikov, G. S. Camarda, R. Tappero in MRS Online Proceedings Library (2011)

  17. No Access

    Article

    Effects of dislocations and sub-grain boundaries on X-ray response maps of CdZnTe radiation detectors

    The imperfect quality of CdZnTe (CZT) crystals for radiation detectors seriously diminishes their suitability for different applications. Dislocations and other dislocation-related defects, such as sub-grain b...

    A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui in MRS Online Proceedings Library (2011)

  18. No Access

    Article

    Study of Structural Defects in CdZnTe Crystals by High Resolution Electron Microscopy

    We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM an...

    A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui in MRS Online Proceedings Library (2011)

  19. No Access

    Article

    Point Defects in CdZnTe Crystals Grown by Different Techniques

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Alt...

    R. Gul, A. Bolotnikov, H. K. Kim, R. Rodriguez in Journal of Electronic Materials (2011)

  20. No Access

    Article

    Time-Resolved and Post-Irradiation Studies of the Interaction of High-Power Pulsed Microwave Radiation with Silicon

    We have measured the microwave-induced damage to the near-surface region of silicon for 1.9-μs pulses at a frequency of 2.856 GHz and a pulse power of up to 7.2 MW. Rectangular samples were irradiated in a tes...

    R. B. James, P. R. Bolton, R. A. Alvarez, R. E. Valiga in MRS Online Proceedings Library (2011)

previous disabled Page of 5