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  1. No Access

    Article

    Time of flight experimental studies of CdZnTe radiation detectors

    A time of flight technique was used to study the carrier trap** time, τ, and mobility, μ, in CdZnTe (CZT) and CdTe radiation detectors. Carriers were generated near the surface of the detector by a nitrogen-...

    J. C. Erickson, H. W. Yao, R. B. James, H. Hermon… in Journal of Electronic Materials (2000)

  2. No Access

    Article

    Compensation and trap** in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

    The thermal ionization energies of traps and their types, whether electron or hole traps, were measured in commercial CdZnTe crystals for radiation detectors. The measurements were done between 20 and 400K usi...

    E. Y. Lee, R. B. James, R. W. Olsen, H. Hermon in Journal of Electronic Materials (1999)

  3. No Access

    Article

    Optical properties of Cd0.9Zn0.1 Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV

    Optical properties of Cd0.9Zn0.1Te (CZT) were studied by variable angle spectroscopic ellipsometry (VASE). Measurements made by VASE were performed on CZT and CdTe samples in air at room temperature at multiple a...

    H. W. Yao, J. C. Erickson, H. B. Barber, R. B. James… in Journal of Electronic Materials (1999)

  4. No Access

    Article

    Analysis of CZT crystals and detectors grown in russia and the ukraine by high-pressure bridgman methods

    Sandia National Laboratories (SNL) is leading an effort to evaluate vertical high pressure Bridgman (VHPB) Cd1−xZnxTe (CZT) crystals grown in the former Soviet Union (FSU) (Ukraine and Russia), in order to study ...

    H. Hermon, M. Schieber, R. B. James, E. Y. Lee, N. Yang… in Journal of Electronic Materials (1999)

  5. No Access

    Article

    Gamma-ray imaging and spectroscopy system using room-temperature semiconductor detector elements

    We report on the design, construction, and testing of a gamma-ray imaging system with spectroscopic capabilities. The imaging system consists of an orthogonal strip detector made from either HgI2 or CdZnTe crysta...

    J. C. Lund, N. R. Hilton, J. E. McKisson… in Journal of Radioanalytical and Nuclear Che… (1998)

  6. No Access

    Article

    Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

    The material showing the greatest promise today for production of large-volume gamma-ray spectrometers operable at room temperature is cadmium zinc telluride (CZT). Unfortunately, because of deficiencies in th...

    R. B. James, B. Brunett, J. Heffelfinger, J. Van Scyoc… in Journal of Electronic Materials (1998)

  7. No Access

    Article

    Lead Iodide X-Ray and Gamma-Ray Spectrometers for Room and High Temperature Operation

    In this study we report on the results of the investigation of lead iodide material properties. The effectiveness of a zone refining purification method on the material purity is determined by ICP-MS and ICP-O...

    H. Hermon, R. B. James, J. Lund, E. Cross, A. Antolak… in MRS Online Proceedings Library (1997)

  8. No Access

    Article

    Influence of Structural Defects and Zinc Composition Variation on the Device Response of Cd1-xZnxTe Radiation Detectors

    Zinc composition variation and gross structural defects including grain and tilt boundaries, twins, and mechanical cracks in high pressure Bridgman Cd1-xZnxTe are characterized and correlated to various detector-...

    H. Yoon, J. M. Van Scyoc, T. S. Gilbert, M. S. Goorsky… in MRS Online Proceedings Library (1997)

  9. No Access

    Article

    Material Requirements for a Boron Phosphide Thermal Neutron Counter

    Electrical characterization (current versus voltage and capacitance versus voltage) of nonstoichiometric amorphous boron phosphide Schottky diodes for neutron detection is presented. These results are incorpor...

    T. P. Viles, B. A. Brunett, H. Yoon, J. C. Lund… in MRS Online Proceedings Library (1997)

  10. No Access

    Article

    Comparison between Cadmium Zinc Telluride Crystals Grown in Russia and in the Ukraine

    A comparative analysis of different Cd1-xZnxTe (CZT) crystals grown by a vertical high pressure Bridgman (VHPB) method is reported. The results of several analytical techniques, such as triple axis x-ray diffract...

    H. Hermon, M. Schieber, R. B. James, N. Yang… in MRS Online Proceedings Library (1997)

  11. No Access

    Article

    Study of the Homogeneity of Cadmium Zinc Telluride Detectors

    Several analytical techniques have been used in the study of the homogeneity of Cadmium Zinc Telluride (CZT) single crystals grown by the vertical high pressure Bridgman (VHPB) method. The presence of black in...

    H. Hermon, M. Schieber, N. Yang, R. B. James… in MRS Online Proceedings Library (1997)

  12. No Access

    Article

    Influence of Structural Defects and Zinc Composition Variation on the Device Response of Cdl-xZnxTe Radiation Detectors

    Zinc composition variation and gross structural defects including grain and tilt boundaries, twins, and mechanical cracks in high pressure Bridgman Cd1-xZnxTe are characterized and correlated to various detector-...

    H. Yoon, J. M. Van Scyoc, T. S. Gilbert, M. S. Goorsky… in MRS Online Proceedings Library (1997)

  13. No Access

    Article

    Investigation of the effects of polishing and etching on the quality of Cd1−xZnxTe using spatial map** techniques

    We examined the effects of polishing and etching on the structural and electrical properties of various high pressure Bridgman Cd1−xZnxTe (CZT) crystals using high resolution x-ray diffraction (HRXRD) and alpha p...

    H. Yoon, J. M. Van Scyoc, M. S. Goorsky, H. Hermon… in Journal of Electronic Materials (1997)

  14. No Access

    Article

    Physical-Chemical Considerations for Semiconductor Room-Temperature Radiation Detectors

    Physical properties of large band gap semiconductors such as: HgI2, CdTe, Cd0.8Zn0.2Te, CdSe, Cd0.7Zn0.3Se, GaAs, PbI2 and TlBr are briefly reviewed and discussed in terms of their use as room temperature operati...

    M. Schieber, H. Hermon, M. Roth in MRS Online Proceedings Library (1993)