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  1. No Access

    Article

    Photoluminescence properties of AlxGa1−x As epitaxial layers grown under conditions of ultrafast flux cooling

    Results are presented of studies of the photoluminescence properties of epitaxial layers of AlxGa1−x As solid solutions grown by liquid-phase epitaxy with nonequilibrium crystallization achieved by ultrafast rate...

    A. V. Abramov, A. G. Deryagin, N. G. Deryagin… in Technical Physics Letters (1997)

  2. No Access

    Article

    Polarization switching time for semiconductor laser radiation

    Expressions are derived for the polarization switching time for semiconductor laser radiation. These expressions can be used to assess the influence of the laser diode parameters on the polarization switching ...

    G. S. Sokolovskii, A. G. Deryagin, V. I. Kuchinskii in Technical Physics Letters (1997)

  3. No Access

    Article

    Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

    The growth of epitaxial layers of GaSb lattice-matched Ga1−x InxAsySb1− y solid solutions by liquid-phase epitaxy from Sb-enriched liquid phases within the spinodal decay region is reported. The highest value of...

    V. I. Vasil’ev, A. G. Deryagin, V. I. Kuchinskii… in Technical Physics Letters (1998)

  4. No Access

    Article

    Modulation of the polarization of semiconductor laser radiation at constant output power

    The degree of polarization of “doubly”-modulated (by the pump current and the optical confinement factor) laser radiation is analyzed by applying a method of analyzing the stability of the solutions of systems...

    G. S. Sokolovskii, A. G. Deryagin, V. I. Kuchinskii in Technical Physics Letters (1998)

  5. No Access

    Article

    GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts

    Nearly isoperiodic solitary Ga1−x InxAsySb1−y /GaSb heterostructures, in which the composition of the solid solution should be found inside the region of spinodal decay (x⩽0.4), were grown by liquid-phase epitaxy...

    V. I. Vasil’ev, D. Akhmedov, A. G. Geryagin, V. I. Kuchinskii… in Semiconductors (1999)

  6. No Access

    Article

    Output radiation focusing in curved-grating distributed Bragg reflector laser

    Output radiation focusing in AlGaAs/GaAs quantum-well curved-grating distributed Bragg reflector (c-DBR) lasers has been theoretically and experimentally studied. It is established that the focal spot size for...

    G. S. Sokolovskii, V. V. Dudelev, I. M. Gadzhiev, S. N. Losev… in Technical Physics Letters (2005)

  7. No Access

    Article

    Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy

    Dependences of the intensity of cathodoluminescence in multiple Al0.55Ga0.45N/Al0.45Ga0.55N quantum wells grown by molecular-beam epitaxy on the growth conditions are studied. An increase (by almost two orders of...

    B. A. Borisov, S. N. Nikishin, V. V. Kuryatkov, V. I. Kuchinskiĭ… in Semiconductors (2006)

  8. No Access

    Article

    VCSELs based on arrays of sub-monolayer InGaAs quantum dots

    Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current apert...

    S. A. Blokhin, N. A. Maleev, A. G. Kuz’menkov, Yu. M. Shernyakov… in Semiconductors (2006)

  9. No Access

    Article

    Self-assembling of zinc and tellurium impurities in zinc-blende MgS

    Conditions providing a thermodynamic advantage governing the self-assembly of Zn and Te impurities in metastable magnesium sulfide (MgS) with zinc-blende structure have been theoretically studied. The formatio...

    O. V. Elyukhina, G. S. Sokolovskiĭ, V. I. Kuchinskiĭ… in Technical Physics Letters (2006)

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    Article

    Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states

    Dynamics of the emission spectra of semiconductor quantum dot (QD) lasers generating on two quantum states has been experimentally studied. Being pumped with 30-ns current pulses, a QD laser ceased to generate...

    G. S. Sokolovskii, M. A. Cataluna, A. G. Deryagin… in Technical Physics Letters (2007)

  11. No Access

    Article

    Self-ordering of Mg and O isoelectronic impurities in ZnSe

    Self-ordering of isoelectronic magnesium and oxygen impurities in ZnSe is described. The formation of 1O4 Mg tetrahedral cells in ZnSe-enriched MgxZn1−x OySe1−y al...

    O. V. Elyukhina, G. S. Sokolovskii, V. I. Kuchinskii in Semiconductors (2007)

  12. No Access

    Article

    Phase effects in broad-stripe curved-grating distributed feedback heterolasers

    Phase effects in AlGaAs/GaAs quantum-well curved-grating distributed feedback (c-DFB) lasers with focused output radiation has been theoretically studied. The results of analysis are compared to experimental d...

    V. V. Dudelev, G. S. Sokolovskii, S. N. Losev, A. G. Deryagin… in Technical Physics Letters (2007)

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    Article

    High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm)

    Use of an external cavity with a grating ensures effective narrowing of the linewidth (∼0.35 nm) of a high-power multimode semiconductor laser with a broad (100 μm) stripe contact. An output power of up to 550...

    D. A. Vinokurov, A. G. Deryagin, V. V. Dyudelev… in Technical Physics Letters (2008)

  14. No Access

    Article

    Switching between generation of two quantum states in quantum-well laser diodes

    The dynamics of emission spectra in semiconductor quantum-well lasers generating from two quantum states have been experimentally studied. In the case of electric pum** with 100-ns pulses, the lasing via tra...

    G. S. Sokolovskiĭ, D. A. Vinokurov, A. G. Deryagin… in Technical Physics Letters (2008)

  15. No Access

    Article

    Generation of propagation-invariant light beams from semiconductor light sources

    We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated u...

    G. S. Sokolovskii, V. V. Dudelev, S. N. Losev… in Technical Physics Letters (2008)

  16. No Access

    Article

    Generation of π modes in semiconductor vertical-cavity surface-emitting lasers

    We have theoretically and experimentally studied optical emission from the side faces of mesa structures for vertical-cavity surface-emitting lasers (VCSELs). The results of spatially resolved spectral measure...

    G. S. Sokolovskii, V. V. Dudelev, A. M. Monakhov… in Technical Physics Letters (2009)

  17. No Access

    Article

    Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

    Broad-stripe edge-emitting semiconductor lasers have been used to obtain propagation-invariant (nondiffracting) light beams with powers and diameters of the central ray acceptable for optical manipulation and ...

    G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, A. G. Deryagin… in Technical Physics Letters (2010)

  18. No Access

    Article

    Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range

    Fast-response, uncooled p-i-n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low do** level (1014–101...

    I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii… in Technical Physics Letters (2010)

  19. No Access

    Article

    Superfocusing of mutimode semiconductor lasers and light-emitting diodes

    The problem of focusing multimode radiation of high-power semiconductor lasers and light-emitting diodes (LEDs) has been studied. In these sources, low spatial quality of the output beam determines theoretical...

    G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, A. G. Deryagin… in Technical Physics Letters (2012)

  20. No Access

    Article

    Properties of narrow-bandgap (0.3–0.48 eV) A3B5 solid solution epilayers grown by metal-organic chemical vapor deposition

    Processes of epitaxial growth of narrow-bandgap (with bandgap value E g ≈ 0.3−0.48 eV) solid solutions GaInAsSb and InAsPSb on InAs substrates by metal-organic ...

    V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. G. Deryagin… in Technical Physics Letters (2012)

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