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Article
Using Classification Methods in Forecasting the Level of Geomagnetic Field Disturbance Based on the Kp-Index
The paper explores the possibilities of using data classification methods when forecasting time series of the geomagnetic Kp-index by machine learning methods. To classify categories of the Kp-index based on the ...
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Article
Picosecond Pulses Generation by Fiber Laser with Semiconductor Optical Amplifier in 1.06 µm Spectral Range
Picosecond optical pulses generation in a ring fiber laser with a semiconductor optical amplifier was investigated. Optical spectrum width is minimal at a fundamental resonant repetition frequency of 45 MHz, c...
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Article
Classification Approach to Prediction of Geomagnetic Disturbances
Magnetic storms can cause disruptions in the operation of radio communications, pipelines, power lines, and electrical networks, and they may possibly cause human health problems. Therefore, prediction of geom...
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Article
High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures
High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dot (QWD) nanostructures with the frontal-end and back-end input of radiation have been studied. A PD with 40 rows of QWDs exhibited a spectral...
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Article
Generation of Picosecond Pulses by Lasers with Distributed Feedback at a Wavelength of 1064 nm
The mode of generation of picosecond optical pulses in the spectral range near 1064 nm by semiconductor lasers with distributed feedback and active region based on an InGaAs/GaAs quantum well has been studied....
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Article
Phosphorescence Kinetics of Singlet Oxygen in HeLa Cells Suspension
The kinetics of singlet oxygen phosphorescence in HeLa cells suspended in phosphate buffered saline (PBS) being generated under photosensitized excitation with Radachlorin photosensitizer has been observed and...
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Article
Spectral Characteristics of the DMEM Cell-Culture Medium
Spectral characteristics of luminescence of the DMEM cell-culture medium are studied. The luminescence spectrum of the medium is determined in the visible and near-IR spectral ranges at wavelengths of up to 13...
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Article
Luminescence of Radachlorin Photosensitizer in Aqueous Solution under Excitation at 405 and 660 nm
Entire luminescence spectrum of a commercial photosensitizer Radachlorin in aqueous solution has been recorded under laser excitation at 660 nm and analyzed. The peak of singlet oxygen phosphorescence at 1274 ...
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Article
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. ...
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Article
RF linewidth in passively mode locked quantum well lasers
Investigation of the stability of pulse repetition rate emitted with semiconductor lasers in the regime of passive mode locking has been conducted. It was shown experimentally that the decrease of an overlap i...
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Article
Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides
Passive mode-locking has been studied in the lasers with tunnel-coupled waveguides with the active region based on InAs/InGaAs quantum dots emitting in the range of 1.3–1.31 μm. Specific optical mode formation...
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Article
Passive mode-locked laser based on quantum dot superlattice
Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization prope...
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Article
Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The t...
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Article
Features of mode locking in laser with quantum well in broad waveguide layer
Passive mode locking (PML) regimes in two-section lasers with quantum wells in broad waveguides operating at λ = 1.06 μm have been studied. The room temperature spectrum of the saturable absorber section retai...
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Article
Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range
Fast-response, uncooled p-i-n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low do** level (1014–101...
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Article
Changes in the solid and liquid phases of different soils in model experiments with monoliths
In long-term (20-year-long) experiments, the behavior of different soils under natural conditions different from their usual functioning conditions were analyzed. From soils under natural conditions, organic a...
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Article
Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures
The Stark effect has been studied in multilayer InGaAs/GaAs laser structures with self-assembled quantum dots (QDs). A shift in the absorption edge depending on the reverse bias voltage has been measured in a ...
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Article
Output radiation focusing in curved-grating distributed Bragg reflector laser
Output radiation focusing in AlGaAs/GaAs quantum-well curved-grating distributed Bragg reflector (c-DBR) lasers has been theoretically and experimentally studied. It is established that the focal spot size for...
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Article
Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation
A method of implanting high-energy heavy ions across the emitter layer of a semiconductor laser has been developed to create distributed regions of ultrafast saturable absorber integrated into the cavity of a ...
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Article
Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber
The near-threshold lasing regimes of AlGaAs lasers with an implanted saturated absorber under short pulsed pum** are investigated experimentally. A near-threshold modesynchronization regime is obtained.
