Skip to main content

19 Result(s)

within A. G. Kuz’menkov Remove this filter

and

  1. Article

    Open Access

    Simulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots

    The optical characteristics of vertical cylindrical micropillars with AlGaAs distributed Bragg reflectors and InAs/GaAs quantum dots, which are designed for the fabrication of single-photon sources, have been ...

    M. A. Bobrov, S. A. Blokhin, N. A. Maleev, A. G. Kuz’menkov, A. A. Blokhin… in JETP Letters (2022)

    Download PDF (463 KB) View Article

  2. No Access

    Article

    The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts

    Using mathematical simulation methods, various versions of the design of electrically-driven single photon sources based on optical microcavities with single quantum dots are investigated. A version of the des...

    S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin… in Technical Physics Letters (2021)

  3. No Access

    Article

    The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

    An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained ...

    S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. P. Vasil’ev… in Technical Physics Letters (2020)

  4. No Access

    Article

    A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

    A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP...

    S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin… in Technical Physics Letters (2020)

  5. No Access

    Article

    Investigation of Anomalous Lasing in Vertical-Cavity Surface-Emitting Lasers of the 850-nm Spectral Range with a Double Oxide Current Aperture at Large Gain-to-Cavity Detuning

    Results of investigation of static characteristics of the vertical-cavity surface-emitting lasers (VCSEL) of the 850-nm spectral range based on strained InGaAs/AlGaAs quantum wells in a wide range of current-a...

    S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuz’menkov… in Optics and Spectroscopy (2020)

  6. No Access

    Article

    The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature

    Results of studying stripe quantum cascade lasers emitting at room temperature in the spectral range of 4.8 µm are presented. Power characteristics and turn-on dynamics of the lasers upon pulse pum** are stu...

    V. V. Dudelev, V. V. Mamutin, D. V. Chistyakov… in Optics and Spectroscopy (2019)

  7. No Access

    Article

    Laser Source for a Compact Nuclear Magnetic Resonance Gyroscope

    Vertical-cavity surface-emitting lasers (VCSELs) of 895 nm spectral range, with fixed direction of output polarization have been developed. These lasers provide single-mode output power of over 1 mW at an oper...

    N. A. Maleev, S. A. Blokhin, M. A. Bobrov, A. G. Kuz’menkov… in Gyroscopy and Navigation (2018)

  8. No Access

    Article

    The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers

    The studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For lo...

    S. A. Blokhin, M. A. Bobrov, A. G. Kuz’menkov, A. A. Blokhin… in Technical Physics Letters (2018)

  9. No Access

    Article

    Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots

    Vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots with an oxide-aperture diameter of ~1 μm have been studied. It is established that peaking of the output ...

    V. V. Dudelev, N. A. Maleev, A. G. Kuz’menkov, S. A. Blokhin… in Technical Physics Letters (2017)

  10. No Access

    Article

    Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pum**

    The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is inves...

    S. A. Blokhin, N. V. Kryzhanovskaya, E. I. Moiseev… in Technical Physics Letters (2016)

  11. No Access

    Article

    Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators

    We have studied the possibility of determining the actual thicknesses and compositions of separate layers in AlGaAs heterostructures with vertical-cavity optical microresonators by the combined use of optical ...

    S. A. Blokhin, A. G. Kuz’menkov, A. G. Gladyshev… in Technical Physics Letters (2014)

  12. No Access

    Article

    Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

    Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. T...

    N. A. Maleev, A. G. Kuz’menkov, M. M. Kulagina, Yu. M. Zadiranov… in Semiconductors (2013)

  13. No Access

    Article

    Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

    Results of a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) with microresonators based on Al0.15Ga0.85As and Al0.8Ga0...

    A. M. Nadtochiy, S. A. Blokhin, A. G. Kuz’menkov… in Technical Physics Letters (2012)

  14. No Access

    Article

    Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs

    Temperature dependence of the threshold current for VCSELs based on submonolayer InGaAs QDs is studied experimentally. It is shown that detuning between the lasing wavelength and the gain spectrum peak must be...

    S. A. Blokhin, A. V. Sakharov, N. A. Maleev, A. G. Kuz’menkov… in Semiconductors (2006)

  15. No Access

    Article

    Room-temperature 1.3-μm lasing in a microdisk with quantum dots

    Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidati...

    N. V. Kryzhanovskaya, S. A. Blokhin, A. G. Gladyshev, N. A. Maleev… in Semiconductors (2006)

  16. No Access

    Article

    VCSELs based on arrays of sub-monolayer InGaAs quantum dots

    Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current apert...

    S. A. Blokhin, N. A. Maleev, A. G. Kuz’menkov, Yu. M. Shernyakov… in Semiconductors (2006)

  17. No Access

    Article

    Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation

    Lasing in microdisks with an asymmetric waveguide formed by selective oxidation was achieved under optical pum** in the temperature range 5–180 K. InGaAs quantum dots (QDs) formed by submonolayer deposition ...

    S. A. Blokhin, N. V. Kryzhanovskaya, A. G. Gladyshev, N. A. Maleev… in Semiconductors (2006)

  18. No Access

    Article

    Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers

    The design and fabrication technology for integrated arrays for vertical-cavity surface-emitting lasers with bottom AlGaAs/GaAs semiconductor and top AlGaO/GaAs distributed Bragg reflectors is suggested. Array...

    N. A. Maleev, A. G. Kuz’menkov, A. E. Zhukov, A. P. Vasil’ev… in Semiconductors (2005)

  19. No Access

    Article

    Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors

    Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy...

    N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil’ev, S. S. Mikhrin… in Semiconductors (2003)