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Article
Competition of (3+2) annulation and (3+2) cycloaddition in the reaction of alkenes with donor-acceptor cyclopropanes
Lewis acid-initiated reaction of (het)aryl-substituted donor-acceptor cyclopropanes with styrenes was studied. The initiation of the process by tin(IV) chloride caused the reaction to proceed in two alternative d...
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Article
Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)
The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with...
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Article
Hybridization of Ontologies and Neural Networks in the Problems of Detecting Anomalies of Time Series
The article describes the results of the development of an algorithm for detecting anomalies of time series taking into account the features of the subject area. The algorithm involves finding a forecast of ti...
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Article
Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy
The paper considers the uncooled photodetectors based on GalnAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a ...
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Article
High-Speed Bridge Photodetectors for the Mid-IR Spectral Region
Uncooled bridge photodetectors based on InAs/InAsSbP heterostructures for the mid-IR region of the spectrum are presented. The bridge structure is distinguished by the fact that the contact pad is placed outsi...
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Article
Study of \({\boldsymbol{D}}_{{\boldsymbol{s}}}^{ + }\) Meson Sources on CMS Experiment Data
The paper is dedicated to the search for sources of \(D_{s}^{ + }\) mesons production, using the d...
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Article
Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm
Uncooled photodiodes based on GaSb/GaAlAsSb heterostructures for recording pulsed infrared radiation in the spectral range of 0.9–1.8 μm are developed and studied. The GaSb active region is prepared using lead...
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Article
Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm)
Photodiodes based on solid solutions in the GaSb–InAs system are for the first time applied to study the spectral characteristics of single and coupled whispering-gallery-mode (WGM) lasers emitting in a range ...
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Article
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
The electroluminescent characteristics of a type-II n-GaSb/n-InAs/p-GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the ...
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Article
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
GaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentr...
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Article
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW
Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epita...
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Article
Choosing Expert Evaluations of Diagnostic Tests of Electric Insulation for High-Voltage Electric Machines
This article provides the results of studying the influence of test voltage frequency on the dynamic parameters (dielectric losses and characteristics of partial discharges) of micaceous insulation of stator w...
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Article
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well
n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurren...
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Article
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoreticall...
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Article
Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons
The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, ker...
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Article
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the ...
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Article
Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
The results of a study aimed at the development of high-efficiency photodiodes for the spectral range 1.5–3.8 μm with various photosensitive-area diameters in the range 0.1–2.0 mm are reported. Epitaxial techn...
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Article
Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide
The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are investigated experimentally. It is shown that the tempe...
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Article
High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
High-speed p-i-n photodiodes for the spectral range of 1.2–2.4 μm are fabricated for the first time based on a GaAs/GaInAsSb/GaAlAsSb heterostructure with separated sensitive-(50 μm in diameter) and contact mesas...
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Article
Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superli...