Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
From Materials to Devices
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Article
Tailored Transdermal Drug Delivery System for Pain Management: Development and Evaluation of Clonidine Hydrochloride/Sodium Montmorillonite Composite Patch
Researchers are always coming up with new techniques and methods to ensure that drug delivery systems are secure, therapeutically efficient, and patient-compliant. Clay minerals are nanolayered silicates consi...
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Article
Investigation of Paracetamol Entrapped Nanoporous Silica Nanoparticles in Transdermal Drug Delivery System
An effort was made to administer paracetamol drug through transdermal patch, as no such formulation of this drug has been developed yet. The primary cause for the lack of such formulations is paracetamol’s po...
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Chapter and Conference Paper
Genetic Algorithm-Based Optimal Deep Neural Network for Detecting Network Intrusions
Computer network attacks are evolving in parallel with the evolution of hardware and neural network architecture. Despite major advancements in network intrusion detection system (NIDS) technology, most implem...
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Book
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Chapter
Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots
Multilayer self-assembled InAs/GaAs QD
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Chapter
In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Cap**
Mid-wavelength infrared (MWIR) ~3–5 μm and long-wavelength infrared (LWIR) ~8–14 μm detectors and FPAs are important in a variety of commercial, military and space applications, e.g., night vision, thermal ima...
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Chapter
Summary and Future Work
The summary and conclusions of the whole work and its future application was discussed in this chapter. In summary, we have started this monograph with a study of different structural and optical properties of...
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Chapter
Introduction
Quantum-dot (QD) infrared photodetectors and focal-plane array (FPA) cameras have wide application in fields such as astronomy, military and defence, space science and medical diagnosis. Due to their three-dim...
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Chapter
Effect of Rapid-Thermal Annealing on Quantum Dot Properties
The InAs/GaAs quantum dots are grown by S-K growth method using molecular beam epitaxy. As-grown defects are always there in samples. Post-growth rapid thermal annealing is one of the key techniques to remove ...
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Chapter
Effects of RTA on Quaternary Capped QDIP Characteristics
In the Stranski-Krastanow growth mode, QD size and shape can be controlled by parameters such as the amount of deposited material and the growth ratio, growth temperature, growth rate and monolayer coverage. S...
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Article
Open AccessBias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in ...
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Article
Open AccessHigh performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conductio...
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Article
Processing of Indian Doppler Weather Radar data for mesoscale applications
This paper demonstrates the usefulness of Indian Doppler Weather Radar (DWR) data for nowcasting applications, and assimilation into a mesoscale Numerical Weather Prediction (NWP) model. Warning Decision Suppo...
