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Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots

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Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

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Abstract

Multilayer self-assembled InAs/GaAs QD

s attract increasing interest due to their application in optoelectronic devices, such as photodetectors, lasers, solar cells and so on. Self-assembled InAs/GaAs quantum dot samples are grown by strain-driven process that arises due to lattice mismatch. In this chapter we have analysed and calculated strain in coupled InAs/GaAs multilayer system capped with quaternary InAlGaAs and GaAs layer of different thicknesses. We have used PL, TEM, AFM and Raman spectroscopy for structural and optical characterizations and HRXRD for strain calculation. By optimizing proper cap** thickness, we can get nice stacking and defect-free quantum dot layer.

Portions of this chapter is [Reprinted from S. Adhikary et al., “Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures” Journal of Crystal Growth, Vol. 312, No. 5, pp. 724–729, 2010 with permission from Elsevier]

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore

    Sourav Adhikary

  2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, India

    Subhananda Chakrabarti

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  1. Sourav Adhikary
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  2. Subhananda Chakrabarti
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Adhikary, S., Chakrabarti, S. (2018). Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots. In: Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors. Springer, Singapore. https://doi.org/10.1007/978-981-10-5290-3_2

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  • DOI: https://doi.org/10.1007/978-981-10-5290-3_2

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-5289-7

  • Online ISBN: 978-981-10-5290-3

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