Abstract
In the Stranski-Krastanow growth mode, QD size and shape can be controlled by parameters such as the amount of deposited material and the growth ratio, growth temperature, growth rate and monolayer coverage. Several researchers realized that it is possible to modify inter-subband energies within QD structures after RTA. Inter-diffusion studies carried out on various QD structures used ion implantation and dielectric cap** methods. Here, we report the effect of post-growth RTA on the material characteristics by using XTEM, HRXRD, and PL, and on device performance of In0.50Ga0.50As/GaAs QDIPs by using a combination barrier comprising quaternary InAlGaAs and GaAs cap**. Three order enhancement in responsivity and two order enhancement in detectivity was observed on QDIP fabricated on 650 °C annealed sample compare to as-grown.
Portion of this chapter [Reprinted from S. Adhikary et al., “A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As cap**,” Volume 47, Issue 11, Pages 3317–3322, 2012, Materials Research Bulletin with permission from Elsevier]
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Adhikary, S., Chakrabarti, S. (2018). Effects of RTA on Quaternary Capped QDIP Characteristics. In: Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors. Springer, Singapore. https://doi.org/10.1007/978-981-10-5290-3_5
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DOI: https://doi.org/10.1007/978-981-10-5290-3_5
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