Skip to main content

11 Result(s)

within S.L. Gu Remove this filter Materials Science Remove this filter Characterization and Evaluation of Materials Remove this filter

and

  1. No Access

    Article

    Oxidation of Gallium Nitride Epilayers in Dry Oxygen

    The oxidation of GaN epilayers in dry oxygen has been studied. The 1-μm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition w...

    P. Chen, R. Zhang, X. F. Xu, Z. Z. Chen, Y. G. Zhou… in MRS Online Proceedings Library (2012)

  2. No Access

    Article

    Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium

    The initial stages of the cubic indium nitride film growth at 350 °C were studied using low-pressure metal-organic chemical vapor deposition. The technique of the pre-deposition of indium was applied, that is,...

    Z. X. Bi, R. Zhang, Z. L. **e, X. Q. **u, Y. D. Ye, B. Liu… in Journal of Materials Science (2007)

  3. No Access

    Article

    Synthesis and Properties of GaxMn1-xN films

    Mn-doped GaN films were grown by hydride vapor phase epitaxy(HVPE). structural measurements show that Mn may substitute Ga atoms in the GaN lattice. Ferromagnetism is observed in these HVPE grown Mn-doped GaN ...

    R. Zhang, Y. Y. Yu, X. Q. **u, Z. L. **e, S. L. Gu… in MRS Online Proceedings Library (2004)

  4. No Access

    Article

    Dielectric properties of AlN film on Si substrate

    AlN films were deposited on p-Si(1 1 1) substrates by a low-pressure metal–organic chemical vapor deposition (MOCVD) system and an Al–AlN–Si (MIS) capacitor was then prepared with the AlN layer as the insulato...

    Z. X. Bi, Y. D. Zheng, R. Zhang, S. L. Gu… in Journal of Materials Science: Materials in… (2004)

  5. No Access

    Article

    Impurity effects on photoluminescence in lateral epitaxially overgrown GaN

    Using a two-photon laser-scanning microscope (LSM), the spectral and intensity variations of photoluminescence (PL) in a lateral epitaxially overgrown GaN film were mapped with submicron resolution. The PL res...

    J. W. P. Hsu, F. F. Schrey, M. J. Matthews, S. L. Gu… in Journal of Electronic Materials (2003)

  6. No Access

    Article

    Prepare of ZnAl2O4/α -Al2O3 complex substrates and growth of GaN films

    With the solid phase reaction between the ZnO film and α -Al2O3 substrate, the ZnAl2O4/ α -Al2O3 complex substrate have been prepared. GaN films were then directly grown on this new kind of substrate using light-...

    Z.X. Bi, R. Zhang, W. P. Li, X.S. Wang, S.L. Gu, B. Shen… in MRS Online Proceedings Library (2001)

  7. No Access

    Article

    Optical and Structural Properties of Mn-Implanted GaN Films

    The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can ...

    J. Xu, J. Li, R. Zhang, X.Q. **u, D.Q. Lu, S.L. Gu… in MRS Online Proceedings Library (2001)

  8. Article

    Structural Properties of Laterally Overgrown GaN

    Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN ‘substrates’ by hydride vapor phase epitaxy (HVPE) have been investigated. The epitaxially lateral overgrowth of GaN on SiO2 are...

    R. Zhang, Y Shi, Y. G. Zhou, B. Shen… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (88 KB) View Article

  9. Article

    Oxidation of Gallium Nitride Epilayers in Dry Oxygen

    The oxidation of GaN epilayers in dry oxygen has been studied. The 1-µm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition w...

    P. Chen, R. Zhang, X.F. Xu, Z.Z. Chen… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (421 KB) View Article

  10. No Access

    Article

    The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

    In this paper, we have developed a new way to recrystallize the poly-GeSi on SiO2. 300nm poly-GeSi was grown by RTP/VLP-CVD on SiO2/Si, and then amorphized by 180 keV-Si+ ion implantation with dose of 2×1014 cm'2

    N. Jiang, J. R. Ma, M. Wu, X. D. Huang, S. L. Gu… in MRS Online Proceedings Library (1997)

  11. No Access

    Article

    Fabrication of Enhancement-Mode GaN-Based Metal–Insulator-Semiconductor Field Effect Transistor

    An enhancement-mode GaN metal-insulator-semiconductor field-effect transistor was successfully fabricated on a GaN/AlGaN/GaN double heterojunction structure with SiO2 as insulator layer. The enhancement mode DC c...

    P. Chen, R. Zhang, Y. G. Zhou, S. Y. **e, Z. Y. Luo… in MRS Online Proceedings Library (1994)