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The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

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Abstract

In this paper, we have developed a new way to recrystallize the poly-GeSi on SiO2. 300nm poly-GeSi was grown by RTP/VLP-CVD on SiO2/Si, and then amorphized by 180 keV-Si+ ion implantation with dose of 2×1014 cm'2. An amorphized region with the damage distribution was formed. After subsequent annealing process, the comparison between the XRD scans and Raman spectra of poly-GeSi and poly-Si indicated that the annealed poly-GeSi was more recrystallized than the poly-Si in the same conditions, this was the inducement of Ge in the annealing process. The segregation of Ge atoms in the heavy damaged region would enhance this inducement. The XTEM showed the longitudinal pattern of GeSi grains which meant the longitudinal sizes were much greater than the horizontal sizes. After annealing process, the final GeSi grain sizes were greater than the poly-Si grain sizes processed in SSIC with the same implantation conditions.

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References

  1. P. Kwizera and R. ReifAppl. Phys. Lett. 41(4) 379 (1982).

    Article  CAS  Google Scholar 

  2. Yasuo Wada and ShigerNishimatsuJ. Electrochem. Soc. Vol. 125 No. 9 1499 (1978).

    Article  CAS  Google Scholar 

  3. R.B. Iverson and R. ReifJ. Appl. Phys. 57(12) 5169 (1985).

    Article  CAS  Google Scholar 

  4. K.T-Y. Kung and R. ReifJ. Appl. Phys. 59(7) 2422 (1986).

    Article  CAS  Google Scholar 

  5. Youdou Zheng, Shulin Gu, ** Han, Rong Zhang and Liqun Hu Progress in Physics (in Chinese) Vol. 13(1-2) 203 (1993).

    Google Scholar 

  6. Youdou Zheng, Rong Zhang, Liqun Hu, Shulin Gu, Ronghua Wang and ** Han Mat. Res. Soc. Symp. Proc. Vol.263 227 (1992).

    Article  CAS  Google Scholar 

  7. D.K. Nayak, K. Kamjoo, J.S. Park, J.C.S. Woo, and K.L. Wang Appl. Phys. Lett. 57(4) 369(1990).

    Article  CAS  Google Scholar 

Download references

Acknowledgement

This work was supported by the Natural Science Foundation of China and the High-Technology Project of China.

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Authors and Affiliations

  1. Department of Physics, Nani**g University, Nan**g, 210093, P.R., China

    N. Jiang, J. R. Ma, M. Wu, X. D. Huang, S. L. Gu, S. D. Yu, L. Q. Hu & Y. D. Zheng

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  1. N. Jiang
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  2. J. R. Ma
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  3. M. Wu
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  4. X. D. Huang
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  7. L. Q. Hu
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  8. Y. D. Zheng
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Jiang, N., Ma, J.R., Wu, M. et al. The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si. MRS Online Proceedings Library 472, 409–414 (1997). https://doi.org/10.1557/PROC-472-409

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