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  1. No Access

    Chapter and Conference Paper

    Study on Warning System of Transportable Pressure Equipment from Regulatory Perspective

    Accidents on transportable pressure equipment happen occasionally and some of them were due to weak supervision on its using and maintenance processes. In order to reduce this kind of accidents, a warning syst...

    Z. R. Yang, Z. Z. Chen, Z. W. Wu, P. Yu in Advances in Condition Monitoring and Struc… (2021)

  2. No Access

    Article

    An intronless sucrose:fructan-6-fructosyltransferase (6-SFT) gene from Dasypyrum villosum enhances abiotic tolerance in tobacco

    Fructans play vital roles in enhancing plant abiotic stress tolerance by reducing oxidative damage, stabilizing cell membranes, improving the osmotic adjustment capacity, and lowering the freezing point. In th...

    X. L. He, J. W. Wang, W. X. Li, Z. Z. Chen, J. Wu, J. X. Zhao… in Biologia Plantarum (2017)

  3. No Access

    Article

    Pd/In/Ni/Au contact to N-polar n-type GaN fabricated by laser lift-off

    Pd/In/Ni/Au contacts to N-polar n-GaN were investigated to obtain low contact resistance and high thermal stability contacts. Two-step thermal annealing method was developed to form the PdIn and InGaN alloys s...

    J. Ma, Z. Z. Chen, S. Jiang, Q. Q. Jiao, J. Z. Li, S. X. Jiang… in Applied Physics A (2015)

  4. No Access

    Article

    Grinding temperature during high-efficiency grinding Inconel 718 using porous CBN wheel with multilayer defined grain distribution

    Porous cubic boron nitride (CBN) wheel with multilayer defined grain distribution was developed based on pore-forming effect of alumina bubbles and sintering technology. High-efficiency grinding experiments we...

    Z. Z. Chen, J. H. Xu, W. F. Ding, C. Y. Ma… in The International Journal of Advanced Manu… (2015)

  5. No Access

    Article

    Preparation mechanism and grinding performance of single-layer self-lubrication brazed CBN abrasive wheels

    In order to fabricate single-layer self-lubrication brazed cubic boron nitride (CBN) abrasive wheels, brazing experiments of graphite particles and AISI 1045 steel were carried out using Ag–Cu–Ti filler alloy....

    W. F. Ding, Q. Miao, J. H. Xu, Z. Z. Chen… in The International Journal of Advanced Manu… (2013)

  6. No Access

    Article

    Fabrication and performance of porous metal-bonded CBN grinding wheels using alumina bubble particles as pore-forming agents

    Porous metal-bonded cubic boron nitride (CBN) composite blocks and grinding wheels were fabricated using alumina bubble particles as pore-forming agents and Cu-Sn-Ti alloy as bonding material. The influence of...

    W. F. Ding, J. H. Xu, Z. Z. Chen, C. Y. Yang… in The International Journal of Advanced Manu… (2013)

  7. No Access

    Article

    Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

    GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS ...

    W. P. Li, R. Zhang, J. Yin, X. H. Liu, Y. G. Zhou… in MRS Online Proceedings Library (2012)

  8. No Access

    Article

    Oxidation of Gallium Nitride Epilayers in Dry Oxygen

    The oxidation of GaN epilayers in dry oxygen has been studied. The 1-μm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition w...

    P. Chen, R. Zhang, X. F. Xu, Z. Z. Chen, Y. G. Zhou… in MRS Online Proceedings Library (2012)

  9. No Access

    Article

    Relationship Between Embedding Depth and Residual Stress in the cBN Grain of Monolayer Brazed Abrasive Tools

    The relationship between the embedding depth and the residual stress in the brazed cBN grains is analyzed experimentally in order to optimize the embedding depth of grains in the monolayer brazed abrasive tool...

    W. F. Ding, J. H. Xu, Z. Z. Chen, Y. C. Fu… in Journal of Materials Engineering and Perfo… (2010)

  10. Chapter and Conference Paper

    Propagation and Reflection of Gas Waves in a Close Tube

    The gas and shock wave’s motion in a receiving tube is investigated numerically and experimentally. The results show that, the velocity of the contact face rises rapidly as gas is injected into the receiving t...

    S. T. Chen, D. P. Hu, Z. Z. Chen, C. Zhu… in New Trends in Fluid Mechanics Research (2009)

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  11. No Access

    Article

    Rapid and sensitive spectrofluorimetric determination of trace amounts of Hg(II) with o-vanillin-8-aminoquinoline

    The fluorimetric determination of mercury ions with o-vanillin-8-aminoquinoline (OVAQ) in aqueous solutions was investigated. Hg(II) could react with the fluorescent reagent OVAQ (λex/em = 278/314 nm) to form a n...

    F. Yang, T. X. Yue, K. H. Xu, Z. Z. Chen, B. Tang in Journal of Analytical Chemistry (2007)

  12. No Access

    Article

    Study on structure of AlGaN on AlN interlayer by synchrotron radiation XRD and RBS

    The AlGaN samples have been grown on AlN interlayer (IL) by metalorganic vapor phase epitaxy (MOVPE). The effects of AlN interlayer (IL) on improvement of crystalline quality of AlGaN and Al incorporation effi...

    Z. X. Qin, H. J. Luo, Z. Z. Chen, Y. Lu, T. J. Yu… in Journal of Materials Science (2007)

  13. No Access

    Article

    Finite number of vortices and bending of finite vortex lines in a confined rotating Bose-Einstein condensate

    The minimal energy configurations of finite Nv-body vortices in a rotating trapped Bose-Einstein condensate is studied analytically by extending the previous work [Y. Castin, R. Dum, Eur. Phys. J. D 7, 399 (1999...

    Z. Z. Chen, Y. L. Ma in The European Physical Journal D (2007)

  14. No Access

    Article

    Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

    The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on specific conta...

    Z.X. Qin, Z.Z. Chen, Y.Z. Tong, X.M. Ding, X.D. Hu, T.J. Yu… in Applied Physics A (2004)

  15. No Access

    Article

    Particle size dependence of fatigue crack propagation in SiC particulate-reinforced aluminium alloy composites

    Fatigue crack propagation (FCP) and fracture mechanisms have been studied for two orientations in powder metallurgy 2024 aluminium alloy matrix composites reinforced with three different sizes of silicon carbi...

    Z. Z. Chen, K. Tokaji, A. Minagi in Journal of Materials Science (2001)

  16. No Access

    Article

    Micropropagation of Taxus mairei from mature trees

    Micropropagation of mature Taxus mariei was achieved using bud explants derived from approximately 1,000-year-old field-grown trees. Bud explants derived from 1-year-old stecklings raised from rooted cuttings of...

    S.-H. Chang, C.-K. Ho, Z.-Z. Chen, J.-Y. Tsay in Plant Cell Reports (2001)

  17. No Access

    Article

    High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

    Metal-insulator-semiconductor structures are fabricated by depositing SiO2 films on an MOCVD-grownn-type GaN epitaxial layer and a GaN/Al0.4Ga0.6N/GaN double heterojunction. The SiO2 films are grown by plasma-enh...

    P. Chen, Y. G. Zhou, H. M. Bu, W. P. Li, Z. Z. Chen… in MRS Online Proceedings Library (2001)

  18. Article

    Fabrication and Characterization of Metalferroelectric-GAN Structures

    GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS ...

    W.P. Li, R. Zhang, J. Yin, X.H. Liu… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (52 KB) View Article

  19. Article

    Oxidation of Gallium Nitride Epilayers in Dry Oxygen

    The oxidation of GaN epilayers in dry oxygen has been studied. The 1-µm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition w...

    P. Chen, R. Zhang, X.F. Xu, Z.Z. Chen… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (421 KB) View Article

  20. No Access

    Article

    The oxidation of gallium nitride epilayers in dry oxygen

    The oxidation of GaN epilayers in dry oxygen has been investigated. The GaN epilayers, about 1 μm thick, were grown on (0001) sapphire substrates by rapid thermal process/low pressure metalorganic chemical vap...

    P. Chen, R. Zhang, X.F. Xu, Y.G. Zhou, Z.Z. Chen, S.Y. **e, W.P. Li… in Applied Physics A (2000)

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