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    Impurity effects on photoluminescence in lateral epitaxially overgrown GaN

    Using a two-photon laser-scanning microscope (LSM), the spectral and intensity variations of photoluminescence (PL) in a lateral epitaxially overgrown GaN film were mapped with submicron resolution. The PL res...

    J. W. P. Hsu, F. F. Schrey, M. J. Matthews, S. L. Gu in Journal of Electronic Materials (2003)