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Article
Optical characteristics of ZnO single crystal grown by the hydrothermal method
ZnO single crystals have been grown by the hydrothermal method. Raman scattering and Photoluminescence spectroscopy (PL) have been used to study samples of ZnO that were unannealed or annealed in different amb...
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Article
Oxidation of Gallium Nitride Epilayers in Dry Oxygen
The oxidation of GaN epilayers in dry oxygen has been studied. The 1-μm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition w...
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Article
Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition
Mn-N co-doped Zn epilayers were grown by metal-organic chemical vapor deposition. The Mn-N co-doped epilayers exhibit single phase hexagonal wurtzite structure, indicative of the small lattice damage from co-d...
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Article
Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer
Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior ...
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Article
Indiscernible benefit of high-resolution HLA ty** in improving long-term clinical outcome of unrelated umbilical cord blood transplant
The success of allogeneic hematopoietic stem cell transplantation depends in part on the accuracy of human leukocyte antigen (HLA) matching between the donor–recipient pair. The higher the number of matching H...
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Article
Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
The initial stages of the cubic indium nitride film growth at 350 °C were studied using low-pressure metal-organic chemical vapor deposition. The technique of the pre-deposition of indium was applied, that is,...
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Article
Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
The dependence of two-dimensional electron gas (2DEG) density and distribution in an AlxGa1-xN/AlN/GaN heterostructure on the thicknesses of the AlxGa1-xN barrier layer and the AlN interfacial layer are investiga...
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Article
Correlation between green luminescence and morphology evolution of ZnO films
Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with diff...
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Article
MOCVD growth and properties of ZnO films using dimethylzinc and oxygen
The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the cha...
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Article
Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition
The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal–organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that ...
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Article
Synthesis and Properties of GaxMn1-xN films
Mn-doped GaN films were grown by hydride vapor phase epitaxy(HVPE). structural measurements show that Mn may substitute Ga atoms in the GaN lattice. Ferromagnetism is observed in these HVPE grown Mn-doped GaN ...
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Article
Dielectric properties of AlN film on Si substrate
AlN films were deposited on p-Si(1 1 1) substrates by a low-pressure metal–organic chemical vapor deposition (MOCVD) system and an Al–AlN–Si (MIS) capacitor was then prepared with the AlN layer as the insulato...
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Article
Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD
ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the rang...
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Article
Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently sol...
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Article
Impurity effects on photoluminescence in lateral epitaxially overgrown GaN
Using a two-photon laser-scanning microscope (LSM), the spectral and intensity variations of photoluminescence (PL) in a lateral epitaxially overgrown GaN film were mapped with submicron resolution. The PL res...
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Article
Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors
The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger’s and Poisson’s equations. Considering the piezoelectric...
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Article
Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition
Si film has been grown on a wurtzite gallium nitride layer on sapphire by low-pressure chemical vapor deposition. Uniform nitrogen incorporation was found in the Si film at the concentration of 5%, indicating ...
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Article
Prepare of ZnAl2O4/α -Al2O3 complex substrates and growth of GaN films
With the solid phase reaction between the ZnO film and α -Al2O3 substrate, the ZnAl2O4/ α -Al2O3 complex substrate have been prepared. GaN films were then directly grown on this new kind of substrate using light-...
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Article
Optical and Structural Properties of Mn-Implanted GaN Films
The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can ...
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Article
Structural Properties of Laterally Overgrown GaN
Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN ‘substrates’ by hydride vapor phase epitaxy (HVPE) have been investigated. The epitaxially lateral overgrowth of GaN on SiO2 are...
