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  1. Article

    Open Access

    Versatile stochastic dot product circuits based on nonvolatile memories for high performance neurocomputing and neurooptimization

    The key operation in stochastic neural networks, which have become the state-of-the-art approach for solving problems in machine learning, information theory, and statistics, is a stochastic dot-product. While...

    M. R. Mahmoodi, M. Prezioso, D. B. Strukov in Nature Communications (2019)

  2. Article

    Open Access

    Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

    Spiking neural networks, the most realistic artificial representation of biological nervous systems, are promising due to their inherent local training rules that enable low-overhead online learning, and energ...

    M. Prezioso, M. R. Mahmoodi, F. Merrikh Bayat, H. Nili, H. Kim in Nature Communications (2018)

  3. Article

    Open Access

    Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits

    The progress in the field of neural computation hinges on the use of hardware more efficient than the conventional microprocessors. Recent works have shown that mixed-signal integrated memristive circuits, esp...

    F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva in Nature Communications (2018)

  4. Article

    Open Access

    Correction: Corrigendum: A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Scientific Reports 7: Article number: 42429; published online: 14 February 2017; updated: 27 July 2017. M. Payvand, A. Madhavan, A. Ghofrani and L. Theogarajan were omitted from the author list in the original...

    B. Chakrabarti, M. A. Lastras-Montaño, G. Adam, M. Prezioso in Scientific Reports (2017)

  5. Article

    Open Access

    A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reac...

    B. Chakrabarti, M. A. Lastras-Montaño, G. Adam, M. Prezioso in Scientific Reports (2017)

  6. Article

    Open Access

    Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

    Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses – the key components of high-performance, analog neuromorphic networks - due to their excellent sc...

    M. Prezioso, F. Merrikh Bayat, B. Hoskins, K. Likharev, D. Strukov in Scientific Reports (2016)

  7. No Access

    Article

    Training and operation of an integrated neuromorphic network based on metal-oxide memristors

    A transistor-free metal-oxide memristor crossbar with low device variability is realised and trained to perform a simple classification task, opening the way to integrated neuromorphic networks of a complexity...

    M. Prezioso, F. Merrikh-Bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev in Nature (2015)

  8. Article

    Open Access

    Surface Nanostructures in Manganite Films

    Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unkn...

    A. Gambardella, P. Graziosi, I. Bergenti, M. Prezioso, D. Pullini in Scientific Reports (2014)

  9. No Access

    Chapter

    Testicolo non palpabile

    Il criptorchidismo è la mancata presenza di uno o di entrambi i testicoli nello scroto; l’incidenza è dell’ 1% a 1 anno di età, del 3% nei nati a termine e del 33% nei prematuri. L’eziopatogenesi sembra essere...

    A. Papparella, M. Romano, F. Nino, B. Del Balzo, L. Pintozzi in Videochirurgia pediatrica (2010)

  10. No Access

    Article

    Defects in nanostructures with ripened InAs/GaAs quantum dots

    InAs/GaAs quantum dot (QD) structures were grown by molecular beam epitaxy (MBE) with InAs coverages θ continuously graded from 1.5 ML to 2.9 ML. A critical coverage of 2.23 ML is found, above which the island...

    L. Nasi, C. Bocchi, F. Germini, M. Prezioso in Journal of Materials Science: Materials in… (2008)