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  1. No Access

    Article

    Incorporation of Highly Concentrated Iron Impurities in InP by High Temperature Ion Implantation

    Iron was introduced in InP by ion implantation with the aim of obtaining a high concentration of substitutional, electrically active, deep level impurities. A substrate temperature higher than 200 °C was maint...

    T. Cesca, A. Gasparotto, N. El Habra, A. Coati… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Defects in nanostructures with ripened InAs/GaAs quantum dots

    InAs/GaAs quantum dot (QD) structures were grown by molecular beam epitaxy (MBE) with InAs coverages θ continuously graded from 1.5 ML to 2.9 ML. A critical coverage of 2.23 ML is found, above which the island...

    L. Nasi, C. Bocchi, F. Germini, M. Prezioso… in Journal of Materials Science: Materials in… (2008)

  3. No Access

    Article

    An informative probability model enhancing real time echobiometry to improve fetal weight estimation accuracy

    A multinormal probability model is proposed to correct human errors in fetal echobiometry and improve the estimation of fetal weight (EFW). Model parameters were designed to depend on major pregnancy data and ...

    G. Cevenini, F. M. Severi, C. Bocchi… in Medical & Biological Engineering & Computi… (2008)

  4. No Access

    Chapter

    Ultrasound and Fetal Stress: Study of the Fetal Blink-Startle Reflex Evoked by Acoustic Stimuli

    The development of ultrasound techniques opened a window on the prenatal world. Since the early 1990s, bidimensional ultrasonography has played an important role in the study of certain fetal behaviours in att...

    C. Bocchi, F. M. Severi, L. Bruni, G. Filardi, A. Delia, C. Boni… in Neonatal Pain (2008)

  5. No Access

    Article

    Residual strain measurements in InGaAs metamorphic buffer layers on GaAs

    This work deals with the strain relaxation mechanism in InGaAs metamorphic buffers (MBs) grown on GaAs substrates and overgrown by InAs quantum dots (QD). The residual strain is measured by using Raman scatter...

    V. Bellani, C. Bocchi, T. Ciabattoni, S. Franchi… in The European Physical Journal B (2007)

  6. Article

    28 Blink-Startle Reflex Habituation in 30–34 Week Low-Risk Fetuses

    OBJECTIVE: To investigate whether the blink-startle reflex (BSR) is a good marker of habituation to vibroacoustic stimulation in healthy preterm fetuses.

    C V Bellieni, F M Severi, C Bocchi, F Bagnoli, F Petraglia… in Pediatric Research (2005)

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  7. No Access

    Article

    Study of the lattice strain relaxation in the Ga1-X Al X Sb/GaSb system by x-ray topography and high resolution diffraction

    High resolution x-ray diffraction and topographic methods have been used to study lattice strain relaxation in the Ga1-X Al X Sb/GaSb system. Samples with layer thickness ranging...

    C. Bocchi, F. Germini, S. Franchi… in Journal of Materials Science: Materials in… (1999)

  8. No Access

    Article

    The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures

    GaAs epitaxial layers have been grown on (001) 6† off-oriented toward (110) Ge substrates by metalorganic vapor phase epitaxy. In order to study the influence of V/III ratio on the growth mechanisms and the st...

    C. Pelosi, G. Attolini, C. Bocchi, P. Franzosi… in Journal of Electronic Materials (1995)

  9. No Access

    Article

    Extended Defects in Fe-Implanted InP After Thermal Annealing

    The recovery of the implant-induced damage and the defects present after thermal annealing at 650 °C in Fe-implanted InP have been investigated by TEM, RBS and X-ray diffractometry as a function of the anneali...

    C. Frigeri, C. Bocchi, A. Carnera, A. Gasparotto… in MRS Online Proceedings Library (1993)

  10. No Access

    Article

    X-Ray double crystal rocking curves of Ga1−x Al x As/GaAs laser structures

    The double crystal X-ray rocking curves of Ga1−x Al x As/GaAs laser structures, with both a single and double confinement, have been calculated on the basis of th...

    C. Bocchi, C. Ferrari, P. Franzosi, M. Scaffardi, P. Diaz… in Il Nuovo Cimento D (1992)

  11. No Access

    Article

    X-ray double-crystal rocking curves in GaAlAs/GaAs heterostructures

    X-ray double-crystal rocking curves of Ga1−x Al x As/GaAs heterostructures have been calculated using a dynamical diffraction model for the general case of Bragg ...

    C. Bocchi, C. Ferrari, P. Franzosi in Il Nuovo Cimento D (1991)

  12. No Access

    Article

    The role of phonon eigenvectors on the X-ray thermal diffuse scattering in GaAs

    The possibility of getting information on the phonon eigenvectors in a diatomic lattice through accurate measurements of the X-ray thermal diffuse scattering (TDS) has been explored for the [001] longitudinal ...

    C. Bocchi, C. Ghezzi in Il Nuovo Cimento D (1989)

  13. No Access

    Article

    Lpe highly perfect ingaasp/lnp structure characterization by x-ray double crystal diffractometry

    X-ray double crystal diffractometry has been used to assess the crystal quality of InGaAsP/ InP single heterostructures grown by liquid phase epitaxy. Diffraction profiles have been obtained in the parallel no...

    C. Bocchi, C. Ferrari, P. Franzosi, G. Fornuto… in Journal of Electronic Materials (1987)

  14. No Access

    Article

    The use of parallel and monochromatic beams for determining the composition of pseudobinary alloys by X-ray fluorescence

    A simple X-ray fluorescence method using nearly parallel and monochromatic beams is analyzed and discussed in connection with the determination of the alloy fraction in pseudobinary A1−x B ...

    C. Bocchi, C. Ghezzi in Applied physics (1979)