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Article
Growth of silicon sheets for photovoltaic applications
Several techniques for the sheet growth of silicon for solar cell substrates are reviewed here. These techniques usually offer an economic advantage over growth in the form of bulk crystals. At least 16 differ...
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Article
Interactions of Structural Defects with Metallic Impurities in Multicrystalline Silicon
Interactions between structural defects and metallic impurities were studied in multicrystalline silicon for solar cell applications. The objective was to gain insight into the relationship between solar cell ...
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Article
Fracture Behavior of Silicon Cut with a High Power Laser
The fracture twist test is used to obtain the statistical fracture strength distribution for 10-cm square single crystal and polycrystalline silicon wafers cut with a high-power Nd:YAG laser. Tensile wafer edg...
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Article
Hydrogen Passivation Studies in Dislocated CZ and FZ Silicon
Hydrogen passivation using a Kaufmann ion source at 400°C has been carried out on FZ and CZ silicon dislocated by four-point bending at high temperatures. The results differ from those reported for dislocation...
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Article
Carbon Precipitation in Cz and Efg Silicon
The defects formed in carbon rich CZ and EFG silicon after a 900°C, 160 or 560 min long, phosphorous diffusion were studied with TEM. Besides misfit dislocations, numerous precipitates were observed in the jun...
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Article
Self-Interstitial Injection Effects on Carbon Diffusion in Silicon At High Temperatures
Carbon diffusivity is reported for different ambient conditions imposed during annealing of silicon in the temperature range from 800 to 100°C, which produce varying levels of silicon self-interstitial supersa...
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Article
Ebic evidence for Carbon-based Gettering in EFG Silicon
The efficiency of solar cells fabricated from low-oxygen, high-carbon, EFG silicon ribbon can be improved by pre-annealing the ribbon at 1200°C prior to processing. TEM analysis shows that the increased effici...
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Article
Enhanced Carbon Diffusion in Silicon During 900°0 Annealing
Enhanced diffusion of carbon is observed to be produced during annealing of silicon at 900°C under conditions of surface oxidation and phosphorus in-diffusion. Silicon containing high concentrations of carbon ...