-
Article
Structural and electrical properties ofn-type bulk gallium arsenide grown from non-stoichiometric melts
The pulling of Si-doped GaAs from melts either Ga- or As-rich resulted in crystals having substantially different properties. The crystals grown from As-rich melts exhibited higher electron mobility with respe...
-
Article
Dislocation Generation Mechanisms and Layer Growth in InP Epitaxy as a Function of Growth Conditions
By studying InP epitaxies it has been found that optimum growth conditions are not achieved under low growth rate regimes, which, on the contrary, yield a defect density nearly as high as under high growth rat...
-
Article
Ebic evidence for Carbon-based Gettering in EFG Silicon
The efficiency of solar cells fabricated from low-oxygen, high-carbon, EFG silicon ribbon can be improved by pre-annealing the ribbon at 1200°C prior to processing. TEM analysis shows that the increased effici...
-
Article
On the nature of plastic deformation generated by hydrostatic pressure in silicon single crystals
Macroscopic plastic deformation of silicon single crystals, caused by annealing at hydrostatic pressure and high temperature, was studied by X-ray topography and transmission electron microscopy. The analysis ...
-
Article
Precipitation of Copper in Transmutation Doped Silicon
During the long-time diffusion of transmutation doped silicon a variety of large CuSi precipitates is introduced into the material. The precipitates have been found to be metastable and transform during subseq...
-
Article
TEM/EBIC Investigations of Structural Defects in Polycrystalline Solar Cells
Most solar silicon is grown in the form of cast ingots, e.g. HEM, Silso and UCP or in the form of thin continous ribbons, e.g. FFG, RTR and Web. HEM and EFG will be considered as representative example of each...
