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  1. No Access

    Article

    Growth of silicon sheets for photovoltaic applications

    Several techniques for the sheet growth of silicon for solar cell substrates are reviewed here. These techniques usually offer an economic advantage over growth in the form of bulk crystals. At least 16 differ...

    R. O. Bell, J. P. Kalejs in Journal of Materials Research (1998)

  2. No Access

    Article

    Interactions of Structural Defects with Metallic Impurities in Multicrystalline Silicon

    Interactions between structural defects and metallic impurities were studied in multicrystalline silicon for solar cell applications. The objective was to gain insight into the relationship between solar cell ...

    S. A. McHugo, H. Hieslmair, E. R. Weber, M. D. Rosenblum… in MRS Online Proceedings Library (1996)

  3. No Access

    Article

    Fracture Behavior of Silicon Cut with a High Power Laser

    The fracture twist test is used to obtain the statistical fracture strength distribution for 10-cm square single crystal and polycrystalline silicon wafers cut with a high-power Nd:YAG laser. Tensile wafer edg...

    C. C. Chao, R. Chleboski, E. J. Henderson, C. K. Holmes… in MRS Online Proceedings Library (1991)

  4. No Access

    Article

    Hydrogen Passivation Studies in Dislocated CZ and FZ Silicon

    Hydrogen passivation using a Kaufmann ion source at 400°C has been carried out on FZ and CZ silicon dislocated by four-point bending at high temperatures. The results differ from those reported for dislocation...

    C. Dubé, J. P. Kalejs, S. Rajendran in MRS Online Proceedings Library (1989)

  5. No Access

    Article

    Carbon Precipitation in Cz and Efg Silicon

    The defects formed in carbon rich CZ and EFG silicon after a 900°C, 160 or 560 min long, phosphorous diffusion were studied with TEM. Besides misfit dislocations, numerous precipitates were observed in the jun...

    S. Q. Feng, J. P. Kalejs, D. G. Ast in MRS Online Proceedings Library (1985)

  6. No Access

    Article

    Self-Interstitial Injection Effects on Carbon Diffusion in Silicon At High Temperatures

    Carbon diffusivity is reported for different ambient conditions imposed during annealing of silicon in the temperature range from 800 to 100°C, which produce varying levels of silicon self-interstitial supersa...

    L. A. Ladd, J. P. Kalejs in MRS Online Proceedings Library (1985)

  7. No Access

    Article

    Finite element analysis of process control and operating limits in edge-defined film-fed growth (EFG) of silicon and sapphire ribbons: A review

    Numerical solutions are described of the coupled heat transfer and capillary equations representing growth of silicon and Al2O3 ribbons by the EFG technique. The solutions allow study on a quantitative level of t...

    J. P. Kalejs, H. M. Ettouney, R. A. Brown in Acta Physica Hungarica (1985)

  8. No Access

    Article

    Ebic evidence for Carbon-based Gettering in EFG Silicon

    The efficiency of solar cells fabricated from low-oxygen, high-carbon, EFG silicon ribbon can be improved by pre-annealing the ribbon at 1200°C prior to processing. TEM analysis shows that the increased effici...

    R. Gleichmann, J. P. Kalejs, D. G. Asta in MRS Online Proceedings Library (1984)

  9. No Access

    Article

    Enhanced Carbon Diffusion in Silicon During 900°0 Annealing

    Enhanced diffusion of carbon is observed to be produced during annealing of silicon at 900°C under conditions of surface oxidation and phosphorus in-diffusion. Silicon containing high concentrations of carbon ...

    L. A. Ladd, J. P. Kalejs, U. Gösele in MRS Online Proceedings Library (1984)

  10. No Access

    Chapter and Conference Paper

    Multiple EFG Silicon Ribbon Technology as the Basis for Manufacturing Low-Cost Terrestrial Solar Cells

    The development of a technology for production of low-cost silicon sheet substrates for solar cells based on the EFG process has been extended to growth of 10 cm wide material. Simultaneous growth of three 10 ...

    B. Mackintosh, J. P. Kalejs, C. T. Ho, F. V. Wald in Photovoltaic Solar Energy Conference (1981)