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  1. No Access

    Article

    UV/O3 assisted InP/Al2O3–Al2O3/Si low temperature die to wafer bonding

    Direct bonding of InP dies to Si wafer at low temperature utilizing Al2O3 high-κ dielectric as the interfacial material for homogeneous bonding is reported. The bonding technique is assisted with a UV/Ozone expos...

    P. Anantha, C. S. Tan in Microsystem Technologies (2015)

  2. No Access

    Article

    Effect of bonding temperature on hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding for 3D integration

    Hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding with different bonding temperature are analyzed in this work. The investigation consists of two parts: hermetic seal stud...

    J. Fan, D. F. Lim, L. Peng, K. H. Li, C. S. Tan in Microsystem Technologies (2013)

  3. No Access

    Article

    Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

    In this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS- compatible processes to investigate th...

    W. Lu, K. L. Pey, N. Singh, K. C. Leong, Q. Liu… in MRS Online Proceedings Library (2012)