20 Result(s)

Article

Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

In this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS- compatible processes to investigate th...

W. Lu, K. L. Pey, N. Singh, K. C. Leong, Q. Liu… in MRS Online Proceedings Library (2012)

Article

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D...

A. Heryanto, W.N. Putra, A. Trigg, S. Gao, W.S. Kwon… in Journal of Electronic Materials (2012)

Article

A Comparative Study of Nickel Silicide Formation Using a Titanium Cap Layer and a Titanium Interlayer

NiSi formation is known to be hindered by interfacial native oxide. Such oxide is easily formed on the Si surface through inefficient cleaning or a long time lag prior to Ni deposition. In this study, two meth...

W. L. Tan, K. L. Pey, Simon Y. M. Chooi, J. H. Ye in MRS Online Proceedings Library (2011)

Article

Length Effects on the Reliability of Dual-Damascene Cu Interconnects

We have carried out experiments on dual-damascene Cu interconnects with different lengths. We find that at short lengths, similar to Al-based interconnects, the reliability of Cubased interconnects improves. A...

F. Wei, C. L. Gan, C. V. Thompson, J. J. Clement… in MRS Online Proceedings Library (2011)

Article

Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

Electromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of th...

C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi, F. Wei… in MRS Online Proceedings Library (2011)

Article

Multi-Via Electromigration Test Structures for Identification and Characterization of Different Failure Mechanisms

Experiments on three-terminal ‘dotted-I’ test structures (copper metal lines with vias at both ends and an additional via at the center) show that the mortality of a single segment not only depends on the valu...

Z. S. Choi, C. W. Chang, J. H. Lee, C. L. Gan… in MRS Online Proceedings Library (2005)

Article

Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segment

Three terminal ‘dotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under a variety of test conditions. Failures (mortalities) were observed even when seg...

C.W. Chang, C.L. Gan, C.V. Thompson, K.L. Pey, W.K. Choi… in MRS Online Proceedings Library (2003)

Article

Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects

The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads (metal...

Z. -S. Choi, C. L. Gan, F. Wei, C. V. Thompson, J. H. Lee… in MRS Online Proceedings Library (2003)

Article

Study of Ge Out-diffusion During Nickel (Platinum ∼ 0, 5, 10 at.%) Germanosilicide Formation

The interfacial reaction between 10 nm Ni(Pt ∼0, 5, 10 at.%) and (100) Si_0.75Ge_0.25 substrate after rapid thermal annealing between 400 and 800°C has been studied in detail using Micro- Raman spectroscopy. Only m...

L. J. **, K. L. Pey, W. K. Choi, E. A. Fitzgerald… in MRS Online Proceedings Library (2003)

Article

Study of Ni(Pt) germanosilicides formation on fully-strained Si_0.9Ge_0.1 and Si0.899Ge_0.1C0.001 by Raman Spectroscopy

In this work, Raman spectroscopy was used to study the reaction of pure Ni and Ni(Pt 5 at. %) with fully-strained Si_0.9Ge_0.1 and Si0.899Ge_0.1C0.001. With pure Ni, it was found that the incorporation of 0.1% C in ...

J. Y. Y. Chaw, K. L. Pey, P. S. Lee, D. Z. Chi, J. P. Liu in MRS Online Proceedings Library (2003)

Article

Experimental Characterization of the Reliability of Multi-Terminal Dual-Damascene Copper Interconnect Trees

The reliability of Cu dual-damascene interconnect trees with 3-terminal (dotted-I), 4-terminal (‘T’) and 5-terminal (‘+’) configurations has been investigated. The lifetime of multiterminal interconnect trees ...

C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi… in MRS Online Proceedings Library (2003)

Article

Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnects

Electromigration stress can give rise to voids that increase the resistance and localized thermal stress in interconnects. Estimation of the extent of voiding can provide information on the material quality an...

L. W. Chu, W. K. Chim, K. L. Pey, J. Y. K. Yeo, L. Chan in Journal of Electronic Materials (2001)

Article

Laser-induced titanium disilicide formation for submicron technologies

Currently, a two-step anneal is employed for the formation of titanium selfaligned silicide (Salicide). The first rapid thermal anneal (RTA) step is to achieve the C49 TiSi₂ phase, and the second step is to form ...

Y. F. Chong, K. L. Pey, A. T. S. Wee, A. See, Z. X. Shen… in Journal of Electronic Materials (2001)

Article

Nickel silicide formation on Si(100) and Poly-Si with a presilicide N₂ ⁺ implantation

The key feature of this study is to incorporate N₂ ⁺ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N₂ ...

P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi… in Journal of Electronic Materials (2001)

Article

Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi₂ Formation

We report experimental findings on the thermal-induced stress-voiding observed during epitaxial CoSi₂ formation on patterned Si(100) wafers associated with the Co/Ti-interposing layer scheme [1-6]. The first rapi...

C. S. Ho, K. L. Pey, C. H. Tung, K. C. Tee, K. Prasad… in MRS Online Proceedings Library (1999)

Article

Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy

The formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)S...

P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding… in MRS Online Proceedings Library (1999)

Article

Line-Width Dependence of Void Formation in Ti-Salicided BF₂-Doped Polysilicon Lines

We report the first observation of voids in sub-quarter micron Ti-salicided BF₂-dopedpolycrystalline silicon (polySi) lines. Some of the voids, with sizes ranging from 10 to 100nm, can be clearly seen on the surf...

H. N. Chua, K. L. Pey, S. Y. Siah, E. H. Lim, C. S. Ho in MRS Online Proceedings Library (1999)

Article

A Study on the Effect of Incorporating Nitrogen Ions on Titanium Disilicide Thin Film Formation for ULSI Applications

C. W. Lim, A. J. Bourdillon, H. Gong, S. K. Lahiri… in Journal of Materials Science Letters (1999)