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Effect of bonding temperature on hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding for 3D integration

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Abstract

Hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding with different bonding temperature are analyzed in this work. The investigation consists of two parts: hermetic seal study using helium bomb test and mechanical support study using four-point bending method. The wafer pairs are bonded at 250, 300 and 350 °C, respectively, under a bonding force of 5,500 N for a duration of 1 h in vacuum (~2.5 × 10−4 mbar). The bonding medium consists of Cu (300 nm) bonding layer and Ti (50 nm) barrier layer. Excellent helium leak rate, which is smaller than the reject limit defined by MIL-STD-883E standard (method 1014.10), and outstanding interfacial adhesion energy are detected for all samples. The cavities sealed at 300 °C present an excellent reliability of temperature cycling test up to 500 cycles. Cu-to-Cu thermo-compression bonding at low temperature (≤300 °C) presents an attractive hermetic seal and a robust mechanical support for 3D integration application.

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Acknowledgments

This work has been carried out as part of the Nanyang Assistant Professorship supported by Nanyang Technological University (NTU). Partial funding is also provided by Defence Science and Technology Agency (DSTA), Singapore. Authors are grateful for support provided by the management and technical staff in the Nanyang Nano-Fabrication Center at NTU.

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Authors and Affiliations

  1. CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, 637553, Singapore

    J. Fan & C. S. Tan

  2. School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore

    J. Fan, D. F. Lim, L. Peng & C. S. Tan

  3. Temasek Laboratories@NTU, Research Techno Plaza, 50 Nanyang Drive, Singapore, 637553, Singapore

    K. H. Li

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  1. J. Fan
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  2. D. F. Lim
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  3. L. Peng
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  4. K. H. Li
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  5. C. S. Tan
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Correspondence to J. Fan.

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Fan, J., Lim, D.F., Peng, L. et al. Effect of bonding temperature on hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding for 3D integration. Microsyst Technol 19, 661–667 (2013). https://doi.org/10.1007/s00542-012-1689-4

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  • DOI: https://doi.org/10.1007/s00542-012-1689-4

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