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  1. Article

    Open Access

    Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

    For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hex...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin… in JETP Letters (2024)

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  2. Article

    Open Access

    Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal

    The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interactio...

    A. I. Yakimov, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin in JETP Letters (2023)

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  3. Article

    Open Access

    Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix

    The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are fo...

    V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii… in JETP Letters (2022)

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  4. No Access

    Article

    Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal

    It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. Th...

    A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii… in JETP Letters (2021)

  5. No Access

    Article

    Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Heterostructures with annular groups of GeSi quantum dots grown on Si(001) substrates with GeSi nanodisks embedded beneath the surface are investigated by the electron spin resonance technique. It is demonstra...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, A. A. Shklyaev… in JETP Letters (2021)

  6. No Access

    Article

    Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range

    The enhancement of the electric field in plasmonic nanostructures on a Si substrate in the near-infrared range is studied theoretically. Two-dimensional square arrays of circular holes of various diameters in ...

    A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii in JETP Letters (2019)

  7. No Access

    Article

    Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

    Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn do...

    A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsuba… in JETP Letters (2019)

  8. No Access

    Article

    XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

    Using X-ray absorption near edge structure spectroscopy, extended X-ray absorption fine structure spectroscopy, atomic force microscopy, and Rutherford backscattering spectroscopy, the features of the microstr...

    S. B. Erenburg, S. V. Trubina, V. A. Zvereva… in Journal of Experimental and Theoretical Ph… (2019)

  9. No Access

    Article

    Localization of Surface Plasmon Waves in Hybrid Photodetectors with Subwavelength Metallic Arrays

    The spectral characteristics of the hole photocurrent in plasmon photodetectors based on Ge/Si heterostructures with Ge quantum dots combined with regular arrays of subwavelength apertures of various shapes in...

    A. I. Yakimov, V. V. Kirienko, A. V. Dvurechenskii in JETP Letters (2018)

  10. No Access

    Article

    Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

    Analytical expressions for the displacement vector, stain tensor, and Eshelby tensor have been obtained in the case where an inclusion in an elastically isotropic infinite medium has a polyhedral shape. The ei...

    A. V. Nenashev, A. V. Dvurechenskii in Physics of the Solid State (2018)

  11. No Access

    Article

    Hall effect in hop** conduction in an ensemble of quantum dots

    The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magneti...

    N. P. Stepina, A. V. Nenashev, A. V. Dvurechenskii in JETP Letters (2017)

  12. No Access

    Article

    Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to t...

    A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii in JETP Letters (2017)

  13. No Access

    Article

    Photoluminescence enhancement in double Ge/Si quantum dot structures

    The luminescence properties of double Ge/Si quantum dot structures are studied at liquid helium temperature depending on the Si spacer thickness d in QD molecules. A seven-fold increase in the integrated photolum...

    A. F. Zinovieva, V. A. Zinovyev, A. I. Nikiforov, V. A. Timofeev… in JETP Letters (2016)

  14. No Access

    Article

    Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces

    The photoconductive gain, hole photocurrent spectra in the mid-infrared range, and band-to-band photoluminescence spectra in arrays of Ge/Si quantum dots with different elemental compositions of the heterointe...

    A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii in JETP Letters (2016)

  15. No Access

    Article

    Suppression of hole relaxation in small Ge/Si quantum dots

    We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied ...

    A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister… in JETP Letters (2015)

  16. No Access

    Article

    Temperature-stimulated transition from a macroscopic to a mesoscopic behavior of the hop** conductivity in a quantum-dot ensemble

    A temperature-induced transition to the macroscopic behavior of the hop** conductivity is observed in Ge/Si quantum-dot heterostructures upon the investigation of light-induced mesoscopic fluctuations of the...

    N. P. Stepina, I. A. Verkhushin, A. V. Nenashev, A. V. Dvurechenskii in JETP Letters (2015)

  17. No Access

    Article

    Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots

    Electron states in ordered Ge/Si heterostructures with linear chains of quantum dots (QDs) were studied by the electron spin resonance (ESR) method. A new ESR signal with principal g-factor values g ...

    A. F. Zinovieva, Zh. V. Smagina, A. V. Nenashev, L. V. Kulik… in JETP Letters (2015)

  18. No Access

    Article

    Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

    Electronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the photocurrent spectroscopy method. It has been found that t...

    A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister… in JETP Letters (2015)

  19. No Access

    Article

    Conductance through chains of Ge/Si quantum dots: Crossover from one-dimensional to quasi-one-dimensional hop**

    Parallel chains of germanium quantum dots were grown on a patterned silicon (100) substrate prepared by the combination of nanoimprint lithography and ion irradiation. Strong anisotropy of the conductance betw...

    N. P. Stepina, V. V. Valkovskii, Y. M. Galperin, Zh. V. Smagina… in JETP Letters (2015)

  20. No Access

    Article

    Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

    Spectra of the photocurrent of holes in δ-doped Si layers with Ge quantum dots in weak external electric fields have been studied. It has been established that the photocurrent of the holes in the photovoltaic...

    A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. V. Dvurechenskii in JETP Letters (2014)

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