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Article
A study of cracking in GaN grown on silicon by molecular beam epitaxy
It is observed that GaN layers grown on silicon substrates often crack. The crack characteristics in hexagonal GaN films on Si(111) has been characterized using scanning electron microscopy and Nomarski optica...
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Article
Photo Modified Growth of GaAs by Chemical Beam Epitaxy
We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) pro...
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Article
Deep level transient spectroscopy studies of undoped and Sn-doped Al x Ga1−x As epilayers grown by liquid-phase epitaxy
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Article
Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy
Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of In1−xGaxP on GaAs substrate have been studied. The behaviour of non-equilibrium solid-liquid interface between In-Ga-P solution and GaAs subst...
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Article
Investigations on the nucleation parameters of InGaAs grown on InP during LPE
The initial stages of LPE growth of the InGaAs ternary compound on an InP substrate were analysed using the classical heterogeneous nucleation theory, incorporating lattice mismatch between the grown alloy and...