Abstract
We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations.
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Jothilingam, R., Farrell, T., Joyce, T.B. et al. Photo Modified Growth of GaAs by Chemical Beam Epitaxy. MRS Online Proceedings Library 510, 113–118 (1998). https://doi.org/10.1557/PROC-510-113
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DOI: https://doi.org/10.1557/PROC-510-113