Abstract
The initial stages of LPE growth of the InGaAs ternary compound on an InP substrate were analysed using the classical heterogeneous nucleation theory, incorporating lattice mismatch between the grown alloy and the substrate. The explicit expression for the lattice mismatch induced supercooling for the growth of the chosen system was established, and it was used to evaluate the nucleation parameters. It has been proved theoretically that the nucleation barrier for the formation of InxGa1 −x As on InP depends very strongly on the composition of the alloy; the condition for the growth of good quality InGaAs on InP was calculated.
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T. AMANO, KEN-ICHIRO TAKAHEI and H. NAGAI,Jpn J. Appl. Phys. 20 (1981) 2105.
S. H. GROVES and M. C. PLONKO,Appl. Phys. Lett. 38 (1981) 1003.
R. F. LEBENY, R. E. POPLLACK, E. D. BEEBE and J. C. D. WINTER,IEEE J. Quantum Electron. QE-17 (1981) 5738.
K. J. BACHMANN and J. L. SHAY,Appl. Phys. Lett. 32 (1978) 446.
T. P. PEARSALL, R. BISARO, R. ANSEL and P. MERENDA,Appl. Phys. Lett. 32 (1978) 497.
T. P. PEARSALL and M. PAPUCHON,Appl. Phys. Lett. 33 (1978) 640.
Y. TAKEDA, A. SASAKI, Y. IMAMURA and T. TAKAGI,J. Appl. Phys. 47 (1976) 5405.
S. B. HYDER, G. A. ANTYPAS, J. S. ESCHER and P. E. GREGORY,Appl. Phys. Lett. 31 (1977) 551.
T. P. PEARSALL, M. QUILLEC and M. A. POLLACK,Appl. Phys. Lett. 35 (1979) 342.
K. NAKAJIMA, T. TANAHASHI, K. AKITA and T. YAMAOKA,J. Appl. Phys. 50 (1979) 4975.
N. CHAND, A. V. SYRBU and P. A. HOUSTON,J. Cryst. Growth 61 (1983) 53.
S.S. CHANDVANKAR and B. M. ARORA,J. Cryst. Growth 94 (1989) 270.
R. SANKARAN, R. L. MOON and G. A. ANTYPAS,J. Cryst. Growth 33 (1976) 271.
T. P. PEARSALL and R. W. HOPSON,J. Elect. Mater. 7 (1978) 133.
Y. TAKEDA and A. SASAKI,J. Cryst. Growth 45 (1978) 257.
Yu. B. BOLKHOVITYANOV,J. Cryst. Growth 57 (1982) 84.
U. KONIG, W. KECK and A. KRIKS,J. Cryst. Growth 68 (1984) 545.
R. DHANASEKARAN. PhD thesis, Anna University, Madras (1984).
Yu. B. BOLKHOVITYANOV and Yu. D. VAULIN,Thin Solid Films 98 (1982) 41.
Yu. B. BOLKHOVITYANOV, V. I. YUDAEV and A. K. GUTAKOVSKY,Thin Solid Films 137 (1986) 111.
K. BHATTACHARYA and SOBHANA SRINIVASA,J. Appl. Phys. 54 (1983) 5090.
W. B. BRANTLEY,J. Appl. Phys. 44 (1973) 534.
T. Y. WU and G. L. PEARSON,J. Phys. Chem. Solids 33 (1972) 409.
M. B. PANISH and M. ILLEGEMS,Prog. Solid State Chem. 7 (1972) 39.
B. de CREMOUX,IEEE J. Quantum Electron. QE-17 (1981) 118.
R. M. POTEMSKI and M. B. SMALL,J. Cryst. Growth 62 (1983) 317.
H. SONOMURA, G. SUNATORI and T. MIYACHI,J. Appl. Phys. 53 (1982) 5336.
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Jothilingam, R., Dhanasekaran, R. & Ramasamy, P. Investigations on the nucleation parameters of InGaAs grown on InP during LPE. J Mater Sci: Mater Electron 5, 267–271 (1994). https://doi.org/10.1007/BF00921249
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DOI: https://doi.org/10.1007/BF00921249