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Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

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Il Nuovo Cimento D

Summary

Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of In1−xGaxP on GaAs substrate have been studied. The behaviour of non-equilibrium solid-liquid interface between In-Ga-P solution and GaAs substrate has been analysed and hence the expression derived for the stress-induced supercooling has been incorporated in the classical heterogeneous nucleation theory. The condition for the growth of good-quality GaInP layer on GaAs substrate has been shown theoretically.

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Authors and Affiliations

  1. Crystal Growth Centre, Anna University, 600 025, Madras, India

    R. Jothilingam, R. Dhanasekaran & P. Ramasamy

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  1. R. Jothilingam
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  2. R. Dhanasekaran
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  3. P. Ramasamy
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Jothilingam, R., Dhanasekaran, R. & Ramasamy, P. Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy. Il Nuovo Cimento D 17, 117–128 (1995). https://doi.org/10.1007/BF02451591

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  • DOI: https://doi.org/10.1007/BF02451591

PACS 68.55.Df

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