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  1. No Access

    Chapter and Conference Paper

    Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra

    The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a ...

    A M Sánchez, M H Gass, A J Papworth, R Beanland… in Microscopy of Semiconducting Materials (2005)

  2. No Access

    Chapter and Conference Paper

    Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure

    We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak positio...

    R Beanland, A M Sánchez, A J Papworth, M H Gass… in Microscopy of Semiconducting Materials (2005)

  3. No Access

    Article

    High Resolution Analysis of Embedded Quantum Dots

    A key piece of information in the understanding of quantum dot behaviour is the composition of the dot after any cap** and/or annealing processes. It is important to know the composition and uniformity of th...

    A. J. Harvey, H. J. Davock, P. J. Goodhew in MRS Online Proceedings Library (1999)

  4. No Access

    Article

    Photo Modified Growth of GaAs by Chemical Beam Epitaxy

    We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) pro...

    R. Jothilingam, T. Farrell, T. B. Joyce, P. J. Goodhew in MRS Online Proceedings Library (1998)

  5. No Access

    Article

    S-Doped GaInAs Grown by Chemical Beam Epitaxy: Electrical and Structural Characterization

    We report on the electrical and structural characterization of sulfur (S) doped Ga0.73In0.27As layers, grown on SI (001) GaAs substrates by chemical beam epitaxy. The room temperature free electron concentration ...

    E. C. Paloura, G. Petkos, P. J. Goodhew, B. Theys… in MRS Online Proceedings Library (1996)

  6. No Access

    Article

    A Refined Model for Threading Dislocation Filtering in InxGa1-xAs/GaAs Epitaxial Layers

    A model is presented for the filtering of threading dislocations in InxGa1-xAs/GaAs epitaxial single layers by accurate control of the layer thickness. The model developed differs from previous models since the I...

    G. Macpherson, P. J. Goodhew in MRS Online Proceedings Library (1996)

  7. Article

    Letters to the Editor

    Donald L. Smith, Elton N. Kaufmann, P. J. Goodhew, Robert W. Cahn… in MRS Bulletin (1995)

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  8. No Access

    Chapter

    Microstructural metrology

    Quantitative descriptions of microstructure are beginning to be used routinely for the characterization of engineering materials. There is great concern, especially in Europe, the USA and Japan, that such quan...

    P. J. Goodhew in Materials Metrology and Standards for Structural Performance (1995)

  9. No Access

    Article

    Interdiffusion Enhancement in AlGaAs/GaAs Superlattices in the Presence of Carbon

    The mechanism of C diffusion through short period GaAs-AlGaAs superlattices has been investigated. The diffusion coefficient of C and the interdiffusion rates of the Ga and Al atoms were estimated by analysing...

    Zul Jamal, P J Goodhew in MRS Online Proceedings Library (1993)

  10. No Access

    Article

    Tem Studies of Impurity Induced Defects in GaAs Grown by CBE

    Defects generated from a thin impurity layer between a CBE-grown epilayer and its GaAs substrate have been studied by TEM. Line defects were observed to emerge randomly from the impurity layer in the various <...

    Zul Jamal, P J Goodhew in MRS Online Proceedings Library (1993)

  11. No Access

    Article

    The Structure of GaAs Grown by Chemical Beam Epitaxy on Low-Temperature Cleaned Silicon

    Chemical beam epitaxy (CBE) has been used to grow GaAs on silicon with a low defect density after etching in HF followed by a low temperature (600°C) in situ heat treatment. High resolution electron microscopy (H...

    Y. R. **ng, C. J. Kiely, P. J. Goodhew in MRS Online Proceedings Library (1992)

  12. No Access

    Article

    Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion

    Carbon do** of GaAs and AlGaAs is easily carried out during chemical beam epitaxy by controlling the proportions of the precursors trimethylgallium and triethylgallium. The diffusion of C introduced at level...

    Z. Jamal, P. J. Goodhew in MRS Online Proceedings Library (1992)

  13. No Access

    Chapter

    Inert Gas Bubble Growth Mechanism Maps for Metals

    Bubble growth and shrinkage is of great importance for the use of materials in reactor environments. Cavity growth mechanism maps are potentially useful because they enable the growth mechanism and rate to be ...

    P. J. Goodhew in Fundamental Aspects of Inert Gases in Solids (1991)

  14. No Access

    Article

    The sputtering of rough cylinders; applications to the thinning of fibres for transmission electron microscopy

    Thinning by ion-bombardment is a useful technique for the preparation of carbon and other fibres for transmission electron microscopy. It is shown that the presence of axial ridges on the initial fibre leads t...

    P. J. Goodhew in Journal of Materials Science (1973)

  15. No Access

    Article

    Low Angle Electron Scattering from Carbonized Polymer Fibres

    MANY observations have been made on carbon or “graphite” fibres by the technique of small angle X-ray scattering1–3. Valuable as these observations are for the investigation of mean scattering parameters from a b...

    P. J. GOODHEW in Nature (1972)