44 Result(s)

Article

Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes

InAs/InAs_0.88Sb_0.12/InAs_0.50Sb_0.20P_0.30 heterostructure photodiodes operating at room temperature in the spectral range 1–4.8 μm are developed. It is shown that the formation of a curvilinear reflecting surface c...

A. N. Imenkov, E. A. Grebenshchikova, D. A. Starostenko, V. V. Sherstnev… in Semiconductors (2013)

Article

Synthesis of 2-phenyl-4,5,6,7-tetrahydro-1H-indoles with a chiral substituent at the nitrogen atom

An efficient method has been developed for the enantioselective synthesis of 2-phenyl-4,5,6,7-tetra-hydro-1H-indoles containing chiral substituents at the nitrogen atom. It is based on opening of the epoxide frag...

I. A. Andreev, I. O. Ryzhkov, A. V. Kurkin… in Chemistry of Heterocyclic Compounds (2012)

Article

Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

It is shown, using the example of InAs/InAsSb/InAsSbP heterostructures, that the formation of a curvilinear reflecting surface consisting of hemispherical etch pits on the rear side of a photodiode chip leads ...

E. A. Grebenshchikova, D. A. Starostenko, V. V. Sherstnev… in Technical Physics Letters (2012)

Article

Room-temperature photodiodes based on InAs/InAs_0.88Sb_0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range

Photodiodes with a photosensitive area of 0.45 × 0.45 mm² operating at room temperature in a wavelength range bounded by 4.9 μm have been created on the basis of InAs/InAs_0.94Sb_0.06/InAsSbP/InAs_0.88Sb_0.12/InAsSbP...

D. A. Starostenko, V. V. Sherstnev, P. A. Alekseev… in Technical Physics Letters (2011)

Article

Preparation of chiral pyrrole derivatives by the Paal-Knorr reaction

A new approach has been developed for the synthesis of N-alkylpyrroles with a chiral substituent at the nitrogen atom by the Paal-Knorr reaction using esters of amino acids as the source of chirality.

I. O. Ryzhkov, I. A. Andreev, G. M. Belov… in Chemistry of Heterocyclic Compounds (2011)

Article

Evaluation of the state of the insulation system of a stator winding of high-voltage electric machines based on measurements of statistical characteristics of partial discharges

The statistical characteristics of amplitude and amplitude-phase spectra of PDs in the insulation of model specimens with artificial flaws in a semiconducting coating are investigated. The algorithm for distin...

I. A. Andreev, V. V. Amosov, Yu. Z. Lyakhovskii in Russian Electrical Engineering (2011)

Article

Passivation of infrared photodiodes with alcoholic sulfide solution

The effect of passivation with the solution of sodium sulfide (Na₂S) in isopropyl alcohol on the room-temperature performance of the GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes is investigated. After such a tr...

M. V. Lebedev, V. V. Sherstnev, E. V. Kunitsyna, I. A. Andreev… in Semiconductors (2011)

Article

Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range

Photodetectors for the spectral range 2–4 μm, based on an asymmetric type-II heterostructure p-InAs/AlSb/InAsSb/AlSb/(p, n)GaSb with a single deep quantum well (QW) or three deep QWs at the heterointerface, have ...

M. P. Mikhailova, I. A. Andreev, K. D. Moiseev, E. V. Ivanov… in Semiconductors (2011)

Article

Photodiodes based on InAs/InAs_0.88Sb_0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range

Photodiodes with a photosensitive area diameter of 0.3 mm operating at room temperature in a middle-IR (2.5–4.9 μm) wavelength range have been created based on InAs/InAs_0.94Sb_0.06/InAsSbP/InAs_0.88Sb_0.12/InAsSbP/I...

V. V. Sherstnev, D. Starostenko, I. A. Andreev… in Technical Physics Letters (2011)

Article

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

The features of growth of GaInAsSb alloy with In content as high as 25 mol % lattice-matched to GaSb by molecular beam epitaxy are studied. These alloys are promising for use as the active region of photodetec...

A. N. Semenov, Ya. V. Terent’ev, B. Ya. Meltser, V. A. Solov’ev… in Semiconductors (2010)

Article

Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range

Fast-response, uncooled p-i-n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low do** level (10¹⁴–10^1...

I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii… in Technical Physics Letters (2010)

Article

Electrical properties of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions

We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various tempera...

M. Ahmetoglu (Afrailov), G. Kaynak, I. A. Andreev… in Technical Physics Letters (2008)

Article

InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties

A liquid phase epitaxy (LPE) technique for growing indium arsenide (InAs)based narrow-bandgap semiconductor compounds for thermophotovoltaic (TPV) applications has been developed. InAs-based multicomponent sol...

V. A. Gevorkyan, V. M. Aroutiounian, K. M. Gambaryan… in Technical Physics Letters (2008)

Article

Structure and dynamic properties of substituted carbonylhydride clusters H₂RuOs₃(CO)₁₃ and H₄Ru₄(CO)₁₂ containing functionalized phosphines

The derivatives of the H₂RuOs₃(CO)₁₃ and H₄Ru₄(CO)₁₂ carbonylhydride clusters containing functionalized (including chiral) phosphines were synthesized. The solid-state structure of H₂RuOs₃(CO)₁₂(Ph₂P(C₄H₃S)) was ...

I. A. Andreev, E. V. Grachova, S. P. Tunik, L. A. Oparina… in Russian Chemical Bulletin (2007)

Article

Thermophotovoltaic converters on indium arsenide-based compounds

Thermophotovoltaic converters based on multicomponent solid solutions of III–V compounds, specifically, InAsSbP/InAs heterostructures (E _g = 0.35–0.60 eV), that are intended for fabricatin...

V. A. Gevorkyan, V. M. Aroutiounian, K. M. Gambaryan, A. O. Arakelyan… in Technical Physics (2007)

Article

Electrical properties of isotype N ⁺-GaSb/n⁰-GaInAsSb/N ⁺-GaAlAsSb type-II heterojunctions

Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N ⁺-GaSb/n⁰-GaInAsSb/N ⁺-GaAlAsSb heterostructures have been studied. Dark-curr...

M. A. Ahmetoglu, I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova… in Semiconductors (2007)

Article

Single crystals of the langasite family: An intriguing combination of properties promising for acoustoelectronics

The main stages of advances in acoustoelectronics and the requirements for the workhorse of acoustoelectronic devices—thermally stable high-Q piezoelectric single crystals with moderate and strong electromechanic...

I. A. Andreev in Technical Physics (2006)

Chapter

High-speed Avalanche Photodiodes for the 2–5 µm Spectral Range

M. P. Mikhailova, I. A. Andreev in Mid-infrared Semiconductor Optoelectronics (2006)

Article

Two decades following the discovery of thermally stable elastic properties of La₃Ga₅SiO₁₄ crystal and coining of the term “langasite” (a review)

Twenty years ago, in December 2003, the Editorial Board of Technical Physics received a paper entitled “The New Piezoelectric Material “Langasite” La₃Ga₅SiO₁₄ with Zero Temperature Coefficient of the Elastic Vibr...

I. A. Andreev in Technical Physics (2004)

Article

High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area

The results of a study aimed at the fabrication of high-sensitivity photodiodes for the 0.9-to 2.55-µm spectral range with a photosensitive area diameter as large as 1–3 mm are presented. A large range of phot...

I. A. Andreev, N. D. Il’inskaya, E. V. Kunitsyna, M. P. Mikhailova… in Semiconductors (2003)