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  1. No Access

    Article

    Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)

    The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with...

    M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov… in Semiconductors (2023)

  2. No Access

    Article

    Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy

    The paper considers the uncooled photodetectors based on GalnAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a ...

    E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, A. A. Pivovarova… in Semiconductors (2023)

  3. No Access

    Article

    Pinning of the Fermi Level on the Oxidized (110) Surfaces of AIII–Sb Semiconductors

    A study is performed of the pinning of the Fermi level on oxidized (110) surfaces of AIII–Sb (GaSb, Ga0.78In0.22As0.18Sb0.82, and Ga0.66Al0.34As0.025Sb0.975) semiconductors. It is shown that the Fermi level is pi...

    P. A. Alekseev, A. N. Smirnov, V. A. Sharov… in Bulletin of the Russian Academy of Science… (2023)

  4. No Access

    Article

    Gettering of Epitaxial Indium Arsenide by the Rare Earth Element Holmium

    the results of a study of the galvanomagnetic properties of indium arsenide grown by liquid-phase epitaxy are presented. It is shown that the use of the rare earth element holmium in the growth of InAs epitaxi...

    E. V. Kunitsyna, Ya. A. Parkhomenko, A. A. Pivovarova, Yu. P. Yakovlev in Semiconductors (2023)

  5. No Access

    Article

    High-Speed Bridge Photodetectors for the Mid-IR Spectral Region

    Uncooled bridge photodetectors based on InAs/InAsSbP heterostructures for the mid-IR region of the spectrum are presented. The bridge structure is distinguished by the fact that the contact pad is placed outsi...

    A. A. Pivovarova, E. V. Kunitsyna, G. G. Konovalov… in Journal of Applied Spectroscopy (2023)

  6. No Access

    Article

    Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm

    Uncooled photodiodes based on GaSb/GaAlAsSb heterostructures for recording pulsed infrared radiation in the spectral range of 0.9–1.8 μm are developed and studied. The GaSb active region is prepared using lead...

    E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov… in Semiconductors (2021)

  7. No Access

    Article

    Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm)

    Photodiodes based on solid solutions in the GaSb–InAs system are for the first time applied to study the spectral characteristics of single and coupled whispering-gallery-mode (WGM) lasers emitting in a range ...

    E. V. Kunitsyna, M. A. Royz, I. A. Andreev, E. A. Grebenshchikova… in Semiconductors (2020)

  8. No Access

    Article

    Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE

    The electroluminescent characteristics of a type-II n-GaSb/n-InAs/p-GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the ...

    M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev… in Semiconductors (2019)

  9. No Access

    Article

    GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

    GaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentr...

    E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov… in Semiconductors (2018)

  10. No Access

    Article

    Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW

    Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epita...

    M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov… in Semiconductors (2018)

  11. No Access

    Article

    Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons

    The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, ker...

    M. V. Bogdanovich, D. M. Kabanau, Y. V. Lebiadok, P. V. Shpak… in Technical Physics (2017)

  12. No Access

    Article

    Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range

    A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the ...

    E. V. Kunitsyna, E. A. Grebenshchikova, G. G. Konovalov, I. A. Andreev… in Semiconductors (2016)

  13. No Access

    Article

    Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm

    The results of a study aimed at the development of high-efficiency photodiodes for the spectral range 1.5–3.8 μm with various photosensitive-area diameters in the range 0.1–2.0 mm are reported. Epitaxial techn...

    I. A. Andreev, O. Yu. Serebrennikova, N. D. Il’inskaya, A. A. Pivovarova… in Semiconductors (2015)

  14. No Access

    Article

    Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

    The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are investigated experimentally. It is shown that the tempe...

    T. V. Bezyazychnaya, M. V. Bogdanovich, V. V. Kabanov, D. M. Kabanau… in Semiconductors (2015)

  15. No Access

    Article

    High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

    High-speed p-i-n photodiodes for the spectral range of 1.2–2.4 μm are fabricated for the first time based on a GaAs/GaInAsSb/GaAlAsSb heterostructure with separated sensitive-(50 μm in diameter) and contact mesas...

    I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, V. V. Dudelev… in Semiconductors (2013)

  16. No Access

    Article

    Passivation of infrared photodiodes with alcoholic sulfide solution

    The effect of passivation with the solution of sodium sulfide (Na2S) in isopropyl alcohol on the room-temperature performance of the GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes is investigated. After such a tr...

    M. V. Lebedev, V. V. Sherstnev, E. V. Kunitsyna, I. A. Andreev… in Semiconductors (2011)

  17. No Access

    Article

    Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

    The features of growth of GaInAsSb alloy with In content as high as 25 mol % lattice-matched to GaSb by molecular beam epitaxy are studied. These alloys are promising for use as the active region of photodetec...

    A. N. Semenov, Ya. V. Terent’ev, B. Ya. Meltser, V. A. Solov’ev… in Semiconductors (2010)

  18. No Access

    Article

    Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range

    Fast-response, uncooled p-i-n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low do** level (1014–101...

    I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii… in Technical Physics Letters (2010)

  19. No Access

    Article

    Electrical properties of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions

    We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various tempera...

    M. Ahmetoglu (Afrailov), G. Kaynak, I. A. Andreev… in Technical Physics Letters (2008)

  20. No Access

    Article

    Electrical properties of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb type-II heterojunctions

    Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb heterostructures have been studied. Dark-curr...

    M. A. Ahmetoglu, I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova… in Semiconductors (2007)

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