Abstract
The effect of passivation with the solution of sodium sulfide (Na2S) in isopropyl alcohol on the room-temperature performance of the GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes is investigated. After such a treatment the dark current density of the GaInAsSb/GaAlAsSb photodiodes at a reverse bias of 0.1 V is reduced from 5.5 × 10−2 to 2.1 × 10−3 A/cm2 and a zero-bias resistance-area product (R 0 A) is improved from 1.0 to 25.6 Ω cm2. For the InAs/InAsSbP photodiodes, the dark current density at U = −0.1 V is decreased from 1.34 to 8.1 × 10−1 A/cm2, while the R 0 A value increases from 4.4 × 10−2 to 7.3 × 10−2 Ω cm2. The method offers long-term stability of the photodiode performance.
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Original Russian Text © M.V. Lebedev, V.V. Sherstnev, E.V. Kunitsyna, I.A. Andreev, Yu.P. Yakovlev, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 4, pp. 535–539.
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Lebedev, M.V., Sherstnev, V.V., Kunitsyna, E.V. et al. Passivation of infrared photodiodes with alcoholic sulfide solution. Semiconductors 45, 526–529 (2011). https://doi.org/10.1134/S1063782611040142
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DOI: https://doi.org/10.1134/S1063782611040142