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  1. No Access

    Article

    Competition of (3+2) annulation and (3+2) cycloaddition in the reaction of alkenes with donor-acceptor cyclopropanes

    Lewis acid-initiated reaction of (het)aryl-substituted donor-acceptor cyclopropanes with styrenes was studied. The initiation of the process by tin(IV) chloride caused the reaction to proceed in two alternative d...

    Yu. A. Volkova, M. A. Boichenko, V. V. Shorokhov… in Russian Chemical Bulletin (2024)

  2. No Access

    Article

    Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)

    The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with...

    M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov… in Semiconductors (2023)

  3. No Access

    Article

    Hybridization of Ontologies and Neural Networks in the Problems of Detecting Anomalies of Time Series

    The article describes the results of the development of an algorithm for detecting anomalies of time series taking into account the features of the subject area. The algorithm involves finding a forecast of ti...

    V. S. Moshkin, D. S. Kurilo, I. A. Andreev in Pattern Recognition and Image Analysis (2023)

  4. No Access

    Article

    Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy

    The paper considers the uncooled photodetectors based on GalnAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a ...

    E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, A. A. Pivovarova… in Semiconductors (2023)

  5. No Access

    Article

    High-Speed Bridge Photodetectors for the Mid-IR Spectral Region

    Uncooled bridge photodetectors based on InAs/InAsSbP heterostructures for the mid-IR region of the spectrum are presented. The bridge structure is distinguished by the fact that the contact pad is placed outsi...

    A. A. Pivovarova, E. V. Kunitsyna, G. G. Konovalov… in Journal of Applied Spectroscopy (2023)

  6. No Access

    Article

    Study of \({\boldsymbol{D}}_{{\boldsymbol{s}}}^{ + }\) Meson Sources on CMS Experiment Data

    The paper is dedicated to the search for sources of \(D_{s}^{ + }\) mesons production, using the d...

    I. A. Andreev, K. M. Ivanov, R. N. Chistov in Bulletin of the Lebedev Physics Institute (2023)

  7. No Access

    Article

    Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm

    Uncooled photodiodes based on GaSb/GaAlAsSb heterostructures for recording pulsed infrared radiation in the spectral range of 0.9–1.8 μm are developed and studied. The GaSb active region is prepared using lead...

    E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov… in Semiconductors (2021)

  8. No Access

    Article

    Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm)

    Photodiodes based on solid solutions in the GaSb–InAs system are for the first time applied to study the spectral characteristics of single and coupled whispering-gallery-mode (WGM) lasers emitting in a range ...

    E. V. Kunitsyna, M. A. Royz, I. A. Andreev, E. A. Grebenshchikova… in Semiconductors (2020)

  9. No Access

    Article

    Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE

    The electroluminescent characteristics of a type-II n-GaSb/n-InAs/p-GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the ...

    M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev… in Semiconductors (2019)

  10. No Access

    Article

    GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

    GaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentr...

    E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov… in Semiconductors (2018)

  11. No Access

    Article

    Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW

    Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epita...

    M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov… in Semiconductors (2018)

  12. No Access

    Article

    Choosing Expert Evaluations of Diagnostic Tests of Electric Insulation for High-Voltage Electric Machines

    This article provides the results of studying the influence of test voltage frequency on the dynamic parameters (dielectric losses and characteristics of partial discharges) of micaceous insulation of stator w...

    A. M. Andreev, I. A. Andreev, Yu. Z. Lyakhovskii in Russian Electrical Engineering (2018)

  13. No Access

    Article

    Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well

    n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurren...

    L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov… in Semiconductors (2018)

  14. No Access

    Article

    Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs

    The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoreticall...

    L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya in Semiconductors (2017)

  15. No Access

    Article

    Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons

    The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, ker...

    M. V. Bogdanovich, D. M. Kabanau, Y. V. Lebiadok, P. V. Shpak… in Technical Physics (2017)

  16. No Access

    Article

    Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range

    A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the ...

    E. V. Kunitsyna, E. A. Grebenshchikova, G. G. Konovalov, I. A. Andreev… in Semiconductors (2016)

  17. No Access

    Article

    Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm

    The results of a study aimed at the development of high-efficiency photodiodes for the spectral range 1.5–3.8 μm with various photosensitive-area diameters in the range 0.1–2.0 mm are reported. Epitaxial techn...

    I. A. Andreev, O. Yu. Serebrennikova, N. D. Il’inskaya, A. A. Pivovarova… in Semiconductors (2015)

  18. No Access

    Article

    Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

    The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are investigated experimentally. It is shown that the tempe...

    T. V. Bezyazychnaya, M. V. Bogdanovich, V. V. Kabanov, D. M. Kabanau… in Semiconductors (2015)

  19. No Access

    Article

    High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

    High-speed p-i-n photodiodes for the spectral range of 1.2–2.4 μm are fabricated for the first time based on a GaAs/GaInAsSb/GaAlAsSb heterostructure with separated sensitive-(50 μm in diameter) and contact mesas...

    I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, V. V. Dudelev… in Semiconductors (2013)

  20. No Access

    Article

    Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

    The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superli...

    M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov… in Semiconductors (2013)

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