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Cu5Zn8 Growth Reversion in Cu/Sn-8Zn-3Bi/Cu During Discontinuous Electromigration

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Abstract

A Cu/Sn-8Zn-3Bi/Cu structure was used to investigate the intermetallic compound (IMC) growth behavior during discontinuous electromigration under current density of 104 A/cm2 at 70°C. Cu5Zn8 IMC formed at both the anode and the cathode interfaces, and the thickness increased with the stressing time. With prolonging the current stressing time, a bulged Cu5Zn8 layer was squeezed out between the former Cu5Zn8 layer and Cu substrate in the samples to relax the excess compressive stress. Additionally, due to the back stress gradient built up by the Sn diffusion, the Zn atomic flux reacted with Cu to form Cu5Zn8 at the cathode side when the power was turned off. Finally, the total IMC thickness of the anode and the cathode under discontinuous current stressing showed a “reversion” in the 69 h and 310 h samples.

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Authors and Affiliations

  1. Department of Applied Physics, Institute of Advanced Materials Physics, Tian** Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tian** University, Tian**, 300072, People’s Republic of China

    Jibin Liu, Wei Zhou, Lijuan Liu & ** Wu

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  1. Jibin Liu
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  2. Wei Zhou
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  3. Lijuan Liu
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  4. ** Wu
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Correspondence to ** Wu.

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Liu, J., Zhou, W., Liu, L. et al. Cu5Zn8 Growth Reversion in Cu/Sn-8Zn-3Bi/Cu During Discontinuous Electromigration. J. Electron. Mater. 41, 2045–2050 (2012). https://doi.org/10.1007/s11664-012-2131-5

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  • DOI: https://doi.org/10.1007/s11664-012-2131-5

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