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Effects of Space Charges in IMPATT Source at Terahertz Regime
Impact ionization and avalanche transit time (IMPATT) operation is based on impact ionization and avalanche multiplication of charge carriers....
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A Comparative Analysis of Optical and Electrical Control of High Frequency Properties of Si IMPATT in W-band
Electrical control of IMPATT (Impact Avalanche Transit Time) diode by applying varying bias currents results in frequency tuning and power...
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Comparative study of real-time terahertz imaging of concealed metallic objects, drug, wood and TNT explosive in transmission/reflection modes using uncooled microbolometer and ultrafast pulsed terahertz imaging systems
The paper reports the art of recording a real-time imaging of concealed metallic objects, paracetamol drug, wood and TNT explosive using 0.11...
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Section II: Prospect of Heterojunction (HT) IMPATT Devices as a Source of Terahertz Radiation
This chapter will present the outcomes of inspection of the IMPATT device under the influence of large amplitude RF signal in Terahertz (THz)regime...
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A Novel Integrated Power Module with Solid-State Diode at THz Frequency—The Concept and a Possible Way to Realize It
The basic concept and possible way to realize a novel power module with device and antenna integrated in the same structure using IMPATT diode has...
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Terahertz Properties of GaN/AlGaN Heterostructure IMPATT Diode
The terahertz properties of a Double Drift Region (DDR) heterostructure IMPATT diode, based on GaN/A1GaN, are simulated for operation around 0.5 THz....
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GaN/AlxGa1−xN/GaN heterostructure IMPATT diode for D-band applications
In this paper, a novel structural impact ionization avalanche transit time (IMPATT) diode configured by GaN/Al x Ga 1− x N/GaN heterostructure is...
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Potentiality of Impact Avalanche Transit Time Diode as Terahertz Source Based on Group IV and III–V Semiconducting Materials
Through the numerical approach, we have determined the response time in avalanche and drift regions of the double drift region (DDR) impact...
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Efficiency of Sub-THz-to-DC Energy Conversion by Means of a Silicon Detector
AbstractThe efficiency η of sub-THz-to-DC energy conversion of a silicon-based plasmonic detector was studied. The dependence of the detector output...
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Section I: Wide Bandgap (WBG) Semiconductors as Terahertz Radiation Generator
IMPATT device with double drift layer created on WBG (wide bandgap) materials in the terahertz region (0.1–10 THz) of the RF spectrum will be...
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Noise Estimation of Heterostructure GaAs/GaP Over Homostructure GaAs and GaP Based IMPATT Devices at 94.0 GHz Frequency
The potential of heterostructure based impact avalanche transit time (IMPATT) devices have been studied and compared with homostructure diode. We...
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Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at 1.0 THz Frequency
We have studied the performance of impact avalanche transit time (IMPATT) devices based on wide band gap semiconductor materials like 4H-SiC and...
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Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noise Characteristics
Small-signal noise simulations have been performed to explore the potency of avalanche transit time (ATT) oscillators based upon wide bandgap (WBG)...
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Semiconductor Devices: Diodes
The topics studied in the previous chapter for homogeneous semiconductors can now be used to understand the behavior of devices made of regions with...
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Oscillators and Frequency Synthesis
Oscillators are found in all radar and communication systems, as a signal source for up- or down-conversion and as a generator of carrier frequency....
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Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part I: Large-Signal Characteristics
The static and high-frequency simulations have been performed to explore the potency of avalanche transit time (ATT) oscillators based upon wide...
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Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches
Effects of selective carbon (C) incorporation in silicon (Si) quasi-read-avalanche-transit-time (QRATT) devices are studied through indigenously...
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Terahertz Radiation from Gallium Phosphide Avalanche Transit Time Sources
The mechanism of terahertz (THz) energy emission from gallium phosphide (GaP)-based avalanche transit time (ATT) sources has been discussed here. Six...
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Heterostructure Devices for THz Signal Recognition
Terahertz region, practically related near the frequency range commencing 100 GHz–10 THz (30 μm toward 3 mm), has drawn great attention during...
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Generation of Short Pulses by Filtering Phase-Modulated CW Laser Radiation
A method for generating short pulses with a high repetition rate is proposed. It is based on periodic modulation of the radiation phase of a CW laser...
