Abstract
We have studied the performance of impact avalanche transit time (IMPATT) devices based on wide band gap semiconductor materials like 4H-SiC and Wz-GaN over low band gap InP at 1.0 tera-hertz (THz) frequencies. A drift-diffusion model is used to design double drift region (DDR) IMPATTs based on these materials. From the results, it is found that the RF power for 4H-SiC gives 26 times more than InP and 4 times than Wz-GaN based IMPATT diode. Similarly, the Wz-GaN has more noise of about 32.6 dB as compared to 4H-SiC (29.5 dB) and InP (31.5 dB). Generation of significant RF power for 4H-SiC with moderate noise is better as compared to the InP and Wz-GaN based devices. The excellent results indicate that 4H-SiC based IMPATT diodes are the future terahertz sources.
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Tripathy, P.R., Mukherjee, M., Pati, S.P. (2019). Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at 1.0 THz Frequency. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_192
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DOI: https://doi.org/10.1007/978-3-319-97604-4_192
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