Abstract
The basic concept and possible way to realize a novel power module with device and antenna integrated in the same structure using IMPATT diode has been proposed that might have useful applications at THz frequency. The power module judiciously used the idea of resonant-cap cavity for oscillator design normally used at microwave and millimetre–wave frequency, slotted disc for broadband operation and an improvised circular microstrip patch antenna integrated in the same structure. The structure is realizable with fully planer technology with some added steps in the device fabrication process. Since there is no need for transmission line or waveguide to connect the antenna with the oscillator, the transmission loss is minimized and the integrated structure will also lead to size miniaturization. The integrated power module is expected to have many applications especially at THz frequency regime.
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Acknowledgements
I am sincerely thankful to Mr. Amitesh Kumar, Scientist of SAMEER Kolkata Centre, India, for hel** me to draw professionally all the diagrams presented in this chapter. I am also thankful to Prof. Hiroshi Inokawa of Research Institute of Electronics, Shizuoka University, Japan, for his illuminating suggestions regarding THz IMPATT diode. Finally, I would like to thank Dr. Arindam Biswas of Kazi Nazrul University, India, and Dr. Aritra Acharyya of Cooch Behar Govt. Engineering College, India, for having fruitful discussion on many issues related to this chapter.
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Kar, S. (2021). A Novel Integrated Power Module with Solid-State Diode at THz Frequency—The Concept and a Possible Way to Realize It. In: Biswas, A., Banerjee, A., Acharyya, A., Inokawa, H. (eds) Emerging Trends in Terahertz Engineering and System Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-15-9766-4_1
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