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Heterostructure Devices for THz Signal Recognition

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Emerging Trends in Terahertz Solid-State Physics and Devices

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Abstract

Terahertz region, practically related near the frequency range commencing 100 GHz–10 THz (30 μm toward 3 mm), has drawn great attention during preceding few decades owing to its hopeful relevance into biological, health and manufacturing fields, wideband and welfare memorandum, radio astronomy, space-borne radar technology, etc. Terahertz spacing suggests to a huge contest yet exists, proposed for Terahertz mechanisms as this is inside the borderline of electrons and light-based machinery. The negative differential resistance supported devices, for instance Gunn diode, impact avalanche transit time (IMPATT) diode, resonant tunneling diode and space-plasma wave based nanometer field effect transistors (FETs) are extensively explored for Terahertz frequency range. Commencing elevated region, devices supported by photon akin to quantum cascade laser (QCL) expand the emission spectra starting mid- and far-infrared to Terahertz spectral variety. Every attempt is to follow the effectual radiation and recognition of THz signals. Radiation power along with recognition sensitivity of Terahertz systems is enormously poor contrasted through the millimeter (MM) band and optoelectronic appliances. In modern days, 2D-plasmon in a GaN hetero-structure-based high electron mobility transistor has concerned a lot of interest owing to the characteristics of aiding emission/recognition of electromagnetic radiation within the Terahertz span. An assessment of the figure-of-merits (FoMs) among GaN and GaAs compounds illustrates that an advanced essential field can provide superior output power density; a superior electron saturation velocity may provide very high-speed conversion time; hence, advanced frequency with a high thermal conductivity may undergo since advanced functioning temperature used for GaN-supported devices.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Haldia Institute of Technology, Haldia, 721657, India

    Amit Bhattacharyya

  2. Department of Electronics and Communication Engineering, Meghnad Saha Institute of Technology, Kolkata, 700150, India

    Manash Chanda

  3. Department of Computer Science and Engineering, Maulana Abul Kalam Azad University of Technology, Kolkata, 700064, India

    Debashis De

Authors
  1. Amit Bhattacharyya
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  2. Manash Chanda
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  3. Debashis De
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Corresponding author

Correspondence to Manash Chanda .

Editor information

Editors and Affiliations

  1. School of Mines and Metallurgy, Kazi Nazrul University, Asansol, West Bengal, India

    Arindam Biswas

  2. Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore

    Amit Banerjee

  3. Department of Electronics and Communication, Cooch Behar Government Engineering College, Cooch Behar, West Bengal, India

    Aritra Acharyya

  4. Research Institute of Electronics, Shizuoka University, Shizuoka, Japan

    Hiroshi Inokawa

  5. Department of Physics, Kazi Nazrul University, Asansol, West Bengal, India

    **tendra Nath Roy

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Bhattacharyya, A., Chanda, M., De, D. (2020). Heterostructure Devices for THz Signal Recognition. In: Biswas, A., Banerjee, A., Acharyya, A., Inokawa, H., Roy, J. (eds) Emerging Trends in Terahertz Solid-State Physics and Devices. Springer, Singapore. https://doi.org/10.1007/978-981-15-3235-1_8

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