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Volume Resistive Switching in Metallic Perovskite Oxides Driven by the Metal-Insulator Transition
In recent years, Resistive Random Access Memory (RRAM) is emerging as the most promising candidate to substitute the present Flash Technology in the...
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Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application
Barium titanate nickelate (BTN) nanorod (NR)-based resistive random access memory (RRAM) has been demonstrated by using the hydrothermal method. The...
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Graphene-based 3D XNOR-VRRAM with ternary precision for neuromorphic computing
Recent studies on neural network quantization have demonstrated a beneficial compromise between accuracy, computation rate, and architecture size....
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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
In this work, Ru-based RRAM devices with atomic layer deposited AlO y /HfO x functional layer were fabricated and studied. A negative differential...
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Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications
With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing...
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The Resistive Switching Characteristics of TiN/HfO2/Ag RRAM Devices with Bidirectional Current Compliance
The performance of TiN/HfO 2 /Ag resistive random-access memory (RRAM) devices combining the oxygen-based RRAM (OxRRAM) and conducting bridge...
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Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability
Thanks to its single-atomic-layer structure, high carrier transport, and low power dissipation, carbon nanotube electronics is a leading candidate...
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Resistive switching properties of hafnium oxide thin-films sputtered at different oxygen partial pressures
We report a study on the effects of O 2 /Ar ratio on the resistive switching properties of HfO x thin-films deposited by using RF magnetron sputtering....
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Inorganic Perovskite Electronic Devices
In recent years, inorganic perovskite materials have gained wide applications in fields such as solar cells, lasers, and optoelectronic detectors due...
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Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory
In this work, unipolar resistive switching (RS) is demonstrated in a Ni/p-NiO/n + -Si heterojunction device based on the formation/rupture of...
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Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO 2 /Au-based Resistive Random Access Memory (RRAM) devices...
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Non-volatile Memory Application Based on Gd2O3 Nanorod
A non-volatile memory device based on Gd2O3 nanorod (NR) has been fabricated on a silicon (Si) wafer with the glancing angle deposition (GLAD)...
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Different Perovskite Materials, Properties, and Applications
Perovskites is a class of materials that have a crystal structure similar to that of the material perovskite. They have a wide range of applications...
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The Future of the Memory Semiconductor Industry
This chapter provides an in-depth analysis of the future prospects of the memory semiconductor industry. It explores emerging technologies, market...
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The bipolar and self-rectifying resistive switching characteristics of UiO-66 modified with uric acid
A memory device with multi-mode Current–Voltage characteristics is vital for various functions in integrated circuit applications. However, studying...
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Structural optical and morphological analysis of a new lead-free perovskite (2-4-FPEA)\(_2\)CuCl\(_4\) and confirmation of resistance-switching behavior
The hybrid organic–inorganic halide perovskites are well-known energy storage and harvesting materials. Its applications in brand-new industries are...
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Enhanced Resistive Switching Effect in Ag Nanoparticles Embedded in Graphene Oxide Thin Film
In this paper, the effect of different concentrations of Ag nanoparticles embedded in graphene oxide (GO) for resistive random-access memory (RRAM)...
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Structural, dielectric, and magnetic responses in Doped ZnO magnetic nanoparticles for spintronics
The influence of Ce and Co co-do** on the structural, dielectric, and magnetic properties of ZnO nanoparticles annealed in an air/oxygen (O 2 )...
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Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
A reliable oxide-based tungsten-doped indium-tin-oxide/tantalum oxide/titanium nitride (W-ITO/TaO x /TiN) memristor with controllable memory states and...
