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Enhanced Resistive Switching Effect in Ag Nanoparticles Embedded in Graphene Oxide Thin Film

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Abstract

In this paper, the effect of different concentrations of Ag nanoparticles embedded in graphene oxide (GO) for resistive random-access memory (RRAM) has been investigated. The spin-coating method was used for the deposition of a GO-Ag layer on indium tin oxide-coated glass substrate. The structural studies of the samples were carried out using x-ray diffraction. The morphology of the as-deposited layer was determined using scanning electron microscopy and atomic force microscopy. It has been observed that Ag-doped memory devices require low voltage to switch from OFF to ON and vice versa. The switching voltage was reduced by half in Ag-doped devices as compared to undoped devices with a high OFF/ON current ratio of ∼ 103. The electrical stability of Ag-doped devices was tested for 4 × 103 s. Also, the SET/RESET behavior was tested for up to 60 cycles at a read voltage of 0.2 V. It was observed that both electrical stability and SET/RESET behavior did not exhibit excessive degradation. The switching speed of the RRAM device was calculated using an oscilloscope and found to be ∼ 200 ns for the low-resistance state (LRS) and ∼ 1 μs for the high-resistance state (HRS). The capacitance in Ag-doped GO devices was recorded and found to be ∼ 400 pF in the HRS as compared to 20 pF in case of undoped GO devices. It has been concluded that the charge trap** and de-trap** mechanism in case of Ag-doped GO is responsible for the enhanced properties of fabricated RRAM devices.

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Acknowledgments

The authors are thankful to Prof. C. C. Tripathi, Director “University Institute of Engineering and Technology” Kurukshetra University, Kurukshetra, India, for providing characterization facilities to complete this work.

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Authors and Affiliations

  1. Electronic Science Department, Kurukshetra University, Kurukshetra, 136119, India

    Rakesh Singh, Ravi Kumar, Anil Kumar, Dinesh Kumar & Mukesh Kumar

  2. J. C. Bose University of Science and Technology YMCA, Faridabad, India

    Dinesh Kumar

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  1. Rakesh Singh
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  2. Ravi Kumar
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Correspondence to Mukesh Kumar.

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Singh, R., Kumar, R., Kumar, A. et al. Enhanced Resistive Switching Effect in Ag Nanoparticles Embedded in Graphene Oxide Thin Film. J. Electron. Mater. 49, 4872–4881 (2020). https://doi.org/10.1007/s11664-020-08207-6

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