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Article
On the energy decay of a nonlinear time-fractional Euler–Bernoulli beam problem including time-delay: theoretical treatment and numerical solution techniques
In this work, an extended Euler–Bernoulli beam equation is addressed, where numerous phenomena are covered including dam**, time-delay, and nonlinear source effects. A generalized fractional derivative is us...
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Article
A Comparative Study on Scaling Capabilities of Si and SiGe Nanoscale Double Gate Tunneling FETs
In the last few years, an accelerated trend towards the miniaturization of nanoscale circuits has been recorded. In this context, the Tunneling Field-Effect Transistors (TFETs) are gaining attention because of...
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Article
A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET
A semianalytical model based on a nonlocal approach is proposed for an undoped tunnel field-effect transistor (TFET) with a vertical surrounding-gate structure. The heterostructure band alignment is computed b...
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Article
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipola...
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Chapter
Fuzzy Modeling of Single Machine Scheduling Problems Including the Learning Effect
In this chapter, we consider the single machine scheduling problem including uncertain parameters and position based learning effect with the aim to minimize the weighted sum of jobs completion times. Due to t...
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Article
Evaluation of optimality in the fuzzy single machine scheduling problem including discounted costs
The single machine scheduling problem has been often regarded as a simplified representation that contains many polynomial solvable cases. However, in real-world applications, the imprecision of data at the le...
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Chapter and Conference Paper
An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices
Nowadays, the tremendous shrinking of electronic devices has reduced their sizes to very low scales. However, this process has been accompanied unavoidably with many well-recognized reliability challenges basi...