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    A Comparative Study on Scaling Capabilities of Si and SiGe Nanoscale Double Gate Tunneling FETs

    In the last few years, an accelerated trend towards the miniaturization of nanoscale circuits has been recorded. In this context, the Tunneling Field-Effect Transistors (TFETs) are gaining attention because of...

    Toufik Bentrcia, Fayçal Djeffal, Hichem Ferhati, Zohir Dibi in Silicon (2020)