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Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation

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Abstract

A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-\(\kappa \) layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.

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Authors and Affiliations

  1. LEA, Department of Electronics, University Mostefa Benboulaid Batna-2, 05000, Batna, Algeria

    Nidhal Abdelmalek & Fayçal Djeffal

  2. LEPCM, Department of Physics, University of Batna-1, 05000, Batna, Algeria

    Fayçal Djeffal & Toufik Bentrcia

Authors
  1. Nidhal Abdelmalek
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  2. Fayçal Djeffal
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  3. Toufik Bentrcia
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Correspondence to Fayçal Djeffal.

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Abdelmalek, N., Djeffal, F. & Bentrcia, T. Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation. J Comput Electron 17, 724–735 (2018). https://doi.org/10.1007/s10825-018-1141-9

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