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A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET

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Abstract

A semianalytical model based on a nonlocal approach is proposed for an undoped tunnel field-effect transistor (TFET) with a vertical surrounding-gate structure. The heterostructure band alignment is computed by applying the affinity rule on suitable potential expressions obtained from the two-dimensional (2-D) electrostatic solution for all device regions. The fringing field, do**-induced degeneracy, ambipolarity, and dual modulation effects are included with the aim of obtaining a large domain of validity. The core model is completed with expressions for the capacitance of the terminals and validated against numerical simulations obtained using ATLAS-2D software. An investigation of the types of band alignment and the impact of do** on the device performance is also conducted. The developed models could be implemented into commercial simulators to investigate circuits based on such multigate field-effect transistors (FETs).

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Authors and Affiliations

  1. LEA, Department of Electronics, University Mostefa Benboulaid Batna-2, 05000, Batna, Algeria

    Nidhal Abdelmalek & Fayçal Djeffal

  2. LEPCM, Department of Physics, University of Batna-1, 05000, Batna, Algeria

    Fayçal Djeffal & Toufik Bentrcia

Authors
  1. Nidhal Abdelmalek
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  2. Fayçal Djeffal
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  3. Toufik Bentrcia
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Correspondence to Fayçal Djeffal.

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Abdelmalek, N., Djeffal, F. & Bentrcia, T. A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET. J Comput Electron 18, 104–119 (2019). https://doi.org/10.1007/s10825-019-01302-w

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