Skip to main content

5 Result(s)

within N. E. Metcalfe Remove this filter

and

  1. No Access

    Article

    MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band

    Results are reported on infrared photodiodes which have been designed to minimize the dark diffusion currents for operating temperatures above 200 K in the MWIR (3–5 µm) waveband. It is shown that by adjusting...

    N. T. Gordon, R. S. Hall, C. L. Jones, C. D. Maxey… in Journal of Electronic Materials (2000)

  2. No Access

    Article

    Effect of device processing on 1/f noise in uncooled, auger-suppressed CdHgTe diodes

    Auger suppression reduces the leakage current in uncooled CdHgTe diodes to the point where the shot noise limited D* is significantly higher than for other uncooled detectors. However, Auger-suppressed diodes ...

    C. L. Jones, N. E. Metcalfe, A. Best, R. Catchpole… in Journal of Electronic Materials (1998)

  3. No Access

    Article

    Minimally cooled heterojunction laser heterodyne detectors in metalorganic vapor phase epitaxially grown Hg1-xCdxTe

    By taking advantage of Auger suppression techniques, the leakage currents of room temperature infrared detectors operating in the LWIR band can be greatly reduced. At present, these detectors suffer from large...

    C. T. Elliott, N. T. Gordon, T. J. Phillips, H. Steen… in Journal of Electronic Materials (1996)

  4. No Access

    Article

    Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

    The ability to grow complex multilayer structures in Hg1-xCdxTe by epitaxial techniques has made it possible to produce a range of new devices such as infrared LEDs, lasers, and two-color infrared detector arrays...

    C. T. Elliott, N. T. Gordon, R. S. Hall, T. J. Phillips… in Journal of Electronic Materials (1996)

  5. No Access

    Article

    Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine do** source to achieve improved device performance at elevated temperatures

    Band gap engineered Hg1−xCdxTe (MCT) heterostructures should lead to detectors with improved electro-optic and radiometric performance at elevated operating temperatures. Growth of such structures was accomplishe...

    C. D. Maxey, C. L. Jones, N. E. Metcalfe, R. Catchpole… in Journal of Electronic Materials (1996)