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  1. Article

    Open Access

    High-Temperature Oxidation of FeCr(Ni) Alloys: The Behaviour After Breakaway

    The oxidation of an austenitic FeCr(Ni) steel at 600 °C in H2O + KCl + O2/H2 + H2O + Ar environments is studied up to 168 h. The oxidation behaviour after “breakaway” is investigated by microstructural investiga...

    T. Jonsson, H. Larsson, S. Karlsson, H. Hooshyar, M. Sattari in Oxidation of Metals (2017)

  2. Article

    Open Access

    Oxidation After Breakdown of the Chromium-Rich Scale on Stainless Steels at High Temperature: Internal Oxidation

    Breakaway oxidation of alloy 304L at 600 °C was studied in four environments (O2 + H2O + KCl, O2 + H2O + SO2 + KCl, H2 + H2O + Ar, O2 + K2CO3) for up to 168 h. The resulting scales were investigated by FIB/SEM, S...

    T. Jonsson, S. Karlsson, H. Hooshyar, M. Sattari, J. Liske in Oxidation of Metals (2016)

  3. Article

    Open Access

    Alkali Induced High Temperature Corrosion of Stainless Steel: The Influence of NaCl, KCl and CaCl2

    The influence of KCl, NaCl and CaCl2 on the oxidation of 304-type (Fe18Cr10Ni) stainless steel at 600 °C in 5 %O2 + 40 %H2O was investigated. Prior to exposure, a small amount of the preferred salt (cation equiva...

    S. Karlsson, J. Pettersson, L. -G. Johansson, J. -E. Svensson in Oxidation of Metals (2012)

  4. No Access

    Article

    Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

    We demonstrate that the performance of silicon carbide MESFETs is largely determined by short-channel effects. Parasitic bipolar transistor turn-on limits the operation voltage to a small fraction of the theor...

    A. Konstantinov, A. M. Saroukhan, S. Karlsson, C. Harris in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Investigation of Lo-Hi-Lo and Delta-Doped Silicon Carbide Structures

    Feasibility of lo-hi-lo and delta-doped structures for evaluation of high-field silicon carbide material properties is investigated. Delta-doped structures are grown using the hot-wall CVD technique. Aluminum ...

    A. Konstantinov, S. Karlsson, C. Adås, C. Harris in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Characterization of P-Type Buffer Layers for SiC Microwave Device Applications

    Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for ac...

    A. O. Konstantinov, S. Karlsson, P. Å Nilsson in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Production of rice husks composites with Acacia mimosa tannin-based resin

    Rice husks are amongst the typical agricultural residues, which are easily available in huge amounts. They have been considered as raw material for composites panels’ production. However, the major hindrance i...

    B. Ndazi, J. V. Tesha, S. Karlsson, E. T. N. Bisanda in Journal of Materials Science (2006)

  8. No Access

    Article

    On the surface elemental composition of non-corroded and corroded dental ceramic materials in vitro

    Dental ceramics are traditionally looked upon as inert materials. As many are glass phased, it may be hypothesized that they will be subjected to glass corrosion in aqueous environments. The aim of the study w...

    P. Milleding, S. Karlsson, L. Nyborg in Journal of Materials Science: Materials in Medicine (2003)

  9. No Access

    Article

    Surface roughening in ion implanted 4H-silicon carbide

    Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective do** of SiC by ion implantation is an impo...

    M. A. Capano, S. Ryu, J. A. Cooper Jr., M. R. Melloch in Journal of Electronic Materials (1999)