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  1. No Access

    Article

    Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

    We demonstrate that the performance of silicon carbide MESFETs is largely determined by short-channel effects. Parasitic bipolar transistor turn-on limits the operation voltage to a small fraction of the theor...

    A. Konstantinov, A. M. Saroukhan, S. Karlsson, C. Harris… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Characterization of P-Type Buffer Layers for SiC Microwave Device Applications

    Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for ac...

    A. O. Konstantinov, S. Karlsson, P. Å Nilsson… in MRS Online Proceedings Library (2011)